IXFP4N100P IXYS, IXFP4N100P Datasheet

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IXFP4N100P

Manufacturer Part Number
IXFP4N100P
Description
MOSFET N-CH 1000V 4A TO-220
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFP4N100P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.3 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 10V
Input Capacitance (ciss) @ Vds
1456pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
4
Rds(on), Max, Tj=25°c, (?)
3.3
Ciss, Typ, (pf)
1456
Qg, Typ, (nc)
26
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
150
Rthjc, Max, (ºc/w)
0.83
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Polar
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
F
M
Weight
Symbol
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
sold
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Force (TO-263)
Mounting Torque (TO-220)
TO-263
TO-220
V
V
V
V
V
Test Conditions
HiPerFET
I
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
Rectifier
= 0V, I
= V
= ± 20V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
D
= 250μA
≤ V
= 250μA
= 0.5 • I
GS
DS
= 0V
DSS
= 0V
TM
, T
D25
J
GS
≤ 150°C
, Notes 1
= 1MΩ
T
J
= 125°C
JM
IXFA4N100P
IXFP4N100P
10.65 / 2.2..14.6
-55 ... +150
-55 ... +150
1000
Characteristic Values
3.0
Min.
Maximum Ratings
1.13 / 10
1000
1000
±20
±30
200
150
150
300
260
2.5
3.0
Typ.
10
4
8
4
Max.
±100
Nm/lb.in.
Nm/lb.in.
6.0
750 μA
10
3.3
V/ns
mJ
nA
μA
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
g
V
I
R
TO-263 AA (IXFA)
TO-220AB (IXFP)
G = Gate
S = Source
Features
Advantages
Applications
D25
International Standard Packages
Low R
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
High Power Density
Easy to Mount
Space Savings
Switch-Mode and Resonant-Mode
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
Power Supplies
DS(on)
DSS
DS(on)
G
D S
= 1000V
= 4A
≤ ≤ ≤ ≤ ≤ 3.3Ω Ω Ω Ω Ω
G
and Q
D
Tab = Drain
S
G
= Drain
D (Tab)
D (Tab)
DS99921A(7/10)

Related parts for IXFP4N100P

IXFP4N100P Summary of contents

Page 1

... D = ± 20V GSS DSS DS DSS 10V 0.5 • I DS(on © 2010 IXYS CORPORATION, All Rights Reserved IXFA4N100P IXFP4N100P Maximum Ratings 1000 = 1MΩ 1000 GS ±20 ± 200 ≤ 150° 150 -55 ... +150 150 -55 ... +150 300 260 10.65 / 2.2..14.6 1. 2.5 3.0 Characteristic Values Min ...

Page 2

... I 9 DSS D D25 12 0.50 Characteristic Values Min. Typ. JM 5.30 0.34 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123B1 5,034,796 5,187,117 5,486,715 6,306,728B1 IXFA4N100P IXFP4N100P TO-220 (IXFP) Outline Max. S Ω Pins Gate 0.83 °C/W °C/W Max TO-263 (IXFA) Outline 1.3 V 300 ...

Page 3

... D 4 125ºC J 3.5 3 2 25º -50 Fig. 2. Extended Output Characteristics @ 10V Volts DS Fig Normalized to I DS(on) D Junction Temperature V = 10V GS - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature - Degrees Centigrade C IXFA4N100P IXFP4N100P = 25º Value vs 100 125 150 100 125 150 ...

Page 4

... J 0.8 0.9 1.0 1.1 0.1 0. Fig. 8. Transconductance 40º 0.5 1 1 Amperes D Fig. 10. Gate Charge 500V 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 1 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXFA4N100P IXFP4N100P 25ºC 125ºC 3 IXYS REF: F_4N100P(45-744)10-08-08 ...

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