STB22NS25ZT4 STMicroelectronics, STB22NS25ZT4 Datasheet
STB22NS25ZT4
Specifications of STB22NS25ZT4
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STB22NS25ZT4 Summary of contents
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... Extremely high dv/dt capability Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications ...
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Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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STB22NS25Z - STP22NS25Z 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS I Drain current (continuos Drain current (continuos ...
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Electrical characteristics 2 Electrical characteristics (Tcase =25°C unless otherwise specified) Table 4. On /off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage GS(th) ...
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STB22NS25Z - STP22NS25Z Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off- delay time d(Voff) t Fall time f t Off-voltage rise time r(Voff) t Fall time f t Cross-over time c Table ...
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Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance 6/14 STB22NS25Z - STP22NS25Z Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance ...
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STB22NS25Z - STP22NS25Z Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature 7/14 ...
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Test circuits 3 Test circuits Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform 8/14 STB22NS25Z - STP22NS25Z Figure 13. Gate charge test ...
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STB22NS25Z - STP22NS25Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package ...
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Package mechanical data DIM L20 L30 øP Q 10/14 TO-220 MECHANICAL DATA mm. MIN. TYP MAX. 4.40 4.60 0.61 0.88 1.15 1.70 0.49 0.70 15.25 15.75 10 ...
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STB22NS25Z - STP22NS25Z DIM PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. MIN. TYP MAX. 4.4 4.6 2.49 2.69 0.03 0.23 ...
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Packaging mechanical data 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 ...
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STB22NS25Z - STP22NS25Z 6 Revision history Table 9. Date 06-Jun-2006 Revision 2 New template Revision history Changes 13/14 ...
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... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...