IRF1010EPBF International Rectifier, IRF1010EPBF Datasheet

MOSFET N-CH 60V 84A TO-220AB

IRF1010EPBF

Manufacturer Part Number
IRF1010EPBF
Description
MOSFET N-CH 60V 84A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets
1.IRF1010EPBF.pdf (8 pages)
2.IRF1010EPBF.pdf (3 pages)

Specifications of IRF1010EPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
84A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
3210pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
84 A
Gate Charge, Total
130 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
200 W
Resistance, Drain To Source On
12 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
48 ns
Time, Turn-on Delay
12 ns
Transconductance, Forward
69 S
Voltage, Breakdown, Drain To Source
60 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
81 A
Mounting Style
Through Hole
Gate Charge Qg
86.6 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF1010EPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
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Part Number:
IRF1010EPBF
Manufacturer:
PANASONIC
Quantity:
10 000
Company:
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Part Number:
IRF1010EPBF
Manufacturer:
IR
Quantity:
20 000
Company:
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Part Number:
IRF1010EPBF
0
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Part Number:
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Company:
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Part Number:
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Quantity:
30 000
Company:
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Part Number:
IRF1010EPBF-MXG
Manufacturer:
IR
Quantity:
20 000
l
l
l
l
l
l
l
Absolute Maximum Ratings
Thermal Resistance
Advanced HEXFET
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts.
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
www.irf.com
Description
I
I
I
P
V
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AR
θJC
θCS
θJA
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
®
Power MOSFETs from International
Parameter
Parameter

The low thermal

ƒ
GS
GS

@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
0.50
–––
–––
IRF1010EPbF
10 lbf•in (1.1N•m)
HEXFET
-55 to + 175
S
D
TO-220AB
Max.
84
330
200
± 20
1.4
4.0
59
50
17
‡
®
R
Power MOSFET
DS(on)
Max.
V
0.75
–––
I
62
D
DSS
= 84A‡
PD - 94965B
= 60V
= 12mΩ
Units
Units
W/°C
°C/W
V/ns
mJ
°C
W
A
V
A
1

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IRF1010EPBF Summary of contents

Page 1

... R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com G The low thermal @ 10V GS @ 10V GS    ƒ 300 (1.6mm from case ) Typ. 0. 94965B IRF1010EPbF ® HEXFET Power MOSFET 60V DSS R = 12mΩ DS(on 84A‡ TO-220AB Max. Units ‡ 330 ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 10 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 T = ...

Page 4

0V MHZ C iss = rss = C gd 5000 C oss = Ciss 4000 3000 Coss 2000 Crss ...

Page 5

LIMITED BY PACKAGE 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 SINGLE PULSE 0.02 ...

Page 6

D.U 20V V GS 0.01 Ω Charge 6 800 15V DRIVER 600 + 400 ...

Page 7

D.U.T + ‚ -  Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 8

E XAMPLE : T HIS 1010 LOT CODE 1789 19, 2000 LINE "C" Note: "P" embly line ...

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