IXFP7N80PM IXYS, IXFP7N80PM Datasheet

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IXFP7N80PM

Manufacturer Part Number
IXFP7N80PM
Description
MOSFET N-CH 800V 3.5A TO-220
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFP7N80PM

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.44 Ohm @ 3.5A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
3.5A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
32nC @ 10V
Input Capacitance (ciss) @ Vds
1890pF @ 25V
Power - Max
50W
Mounting Type
Through Hole
Package / Case
TO-220
Resistance Drain-source Rds (on)
1.5 Ohms
Continuous Drain Current
4 A
Power Dissipation
50 W
Mounting Style
Through Hole
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
3.5
Rds(on), Max, Tj=25°c, (?)
1.44
Ciss, Typ, (pf)
1890
Qg, Typ, (nc)
32
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
50
Rthjc, Max, (ºc/w)
2.5
Package Style
TO-220 Overmolded
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFP7N80PM
Manufacturer:
IXYS
Quantity:
18 000
PolarHV
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GSS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
Note 1
Continuous
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
TM
= 0 V, I
= V
= ±30 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
DSS
HiPerFET
, I
D
D
D
= 250 μA
= 1 mA
G
= 3.5 A
DS
= 10 Ω
= 0 V
GS
= 1 MΩ
DD
T
≤ V
J
= 125°C
DSS
JM
IXFP7N80PM
,
800
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
± 30
± 40
800
800
300
150
300
260
3.5
3.0
18
20
10
50
4
±100
1.44
500
Max.
5.0
25
V/ns
mJ
mJ
nA
μA
μA
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
OVERMOLDED TO-220
(IXTP...M) OUTLINE
Features
Advantages
Plastic overmolded tab for electrical
isolation
Fast intrinsic diode
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
G
V
I
R
t
D25
rr
G = Gate
S = Source
DSS
DS(on)
D
S
= 800 V
= 3.5 A
≤ ≤ ≤ ≤ ≤ 1.44 Ω Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 250 ns
D = Drain
DS99598E(08/06)
Isolated Tab

Related parts for IXFP7N80PM

IXFP7N80PM Summary of contents

Page 1

... GS(th ± GSS DSS DS DSS 3.5 A DS(on Note 1 © 2006 IXYS All rights reserved IXFP7N80PM Maximum Ratings 800 = 1 MΩ 800 GS ± 30 ± 300 ≤ DSS 50 -55 ... +150 150 -55 ... +150 300 260 1.13/10 Nm/lb.in. 3.0 Characteristic Values Min. Typ. ...

Page 2

... DSS D 9 Characteristic Values (T = 25°C unless otherwise specified) J Min. Typ. 0.3 3 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFP7N80PM ISOLATED TO-220 (IXFP...M) Max Terminals Gate 2 - Drain (Collector) 2.5 °C Source (Emitter) Max 1.5 V 250 ns μC ...

Page 3

... GS 6V 2.8 2 1.6 1.2 0.8 0.4 - 3.5A Value D 4 125ºC J 3.5 3.0 2.5 2.0 1.5 1 25ºC J 0.5 0 -50 IXFP7N80PM Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized 3.5A Value DS(on Junction Temperature V = 10V - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. ...

Page 4

... T = 25º 0.8 0 10.00 C iss 1.00 C oss 0.10 C rss 0.01 0.00001 IXFP7N80PM Fig. 8. Transconductance 40ºC J 25ºC 125º Amperes D Fig. 10. Gate Charge V = 400V 3. 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Resistance 0.0001 0.001 0.01 0.1 Pulse W idth - Seconds ...

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