MOSFET N-CH 500V 7.2A TO-220FP

STP9NK50ZFP

Manufacturer Part NumberSTP9NK50ZFP
DescriptionMOSFET N-CH 500V 7.2A TO-220FP
ManufacturerSTMicroelectronics
SeriesSuperMESH™
STP9NK50ZFP datasheet
 


Specifications of STP9NK50ZFP

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs850 mOhm @ 3.6A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C7.2AVgs(th) (max) @ Id4.5V @ 100µA
Gate Charge (qg) @ Vgs32nC @ 10VInput Capacitance (ciss) @ Vds910pF @ 25V
Power - Max30WMounting TypeThrough Hole
Package / CaseTO-220FPConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.85 Ohm @ 10 V
Drain-source Breakdown Voltage500 VGate-source Breakdown Voltage+/- 30 V
Continuous Drain Current7.2 APower Dissipation30000 mW
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CContinuous Drain Current Id7.2A
Drain Source Voltage Vds500VOn Resistance Rds(on)850mohm
Rds(on) Test Voltage Vgs10VThreshold Voltage Vgs Typ3.75V
Rohs CompliantYesLead Free Status / RoHS StatusLead free / RoHS Compliant
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STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1
ABSOLUTE MAXIMUM RATINGS
Symbol
V
Drain-source Voltage (V
DS
V
Drain-gate Voltage (R
DGR
V
Gate- source Voltage
GS
I
Drain Current (continuous) at T
D
I
Drain Current (continuous) at T
D
I
( )
Drain Current (pulsed)
DM
P
Total Dissipation at T
TOT
Derating Factor
V
Gate source ESD(HBM-C=100pF, R=1.5K
ESD(G-S)
dv/dt (1)
Peak Diode Recovery voltage slope
V
Insulation Withstand Voltage (DC)
ISO
T
Operating Junction Temperature
j
T
Storage Temperature
stg
( ) Pulse width limited by safe operating area
(1) I
7.2A, di/dt 200A/µs, V
V
SD
DD
(BR)DSS
(*) Limited only by maximum temperature allowed
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case Max
Rthj-amb
Thermal Resistance Junction-ambient Max
T
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERISTICS
Symbol
I
Avalanche Current, Repetitive or Not-Repetitive
AR
(pulse width limited by T
E
Single Pulse Avalanche Energy
AS
(starting T
= 25 °C, I
j
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BV
Gate-Source Breakdown
GSO
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
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Parameter
= 0)
GS
= 20 k )
GS
= 25°C
C
= 100°C
C
= 25°C
C
, T
T
j
JMAX.
Parameter
max)
j
= I
, V
= 50 V)
D
AR
DD
Test Conditions
Igs=± 1mA (Open Drain)
Value
STP9NK50Z
STB9NK50Z
STP9NK50ZFP
STB9NK50Z-1
500
500
± 30
7.2
7.2 (*)
4.5
4.5 (*)
28.8
28.8 (*)
110
30
0.88
0.24
3500
4.5
-
2500
-55 to 150
-55 to 150
2
TO-220 / D
PAK /
TO-220FP
2
I
PAK
1.14
4.2
62.5
300
Max Value
7.2
190
Min.
Typ.
Max.
30
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
°C
°C/W
°C/W
°C
Unit
A
mJ
Unit
V