MOSFET N-CH 500V 7.2A TO-220FP

STP9NK50ZFP

Manufacturer Part NumberSTP9NK50ZFP
DescriptionMOSFET N-CH 500V 7.2A TO-220FP
ManufacturerSTMicroelectronics
SeriesSuperMESH™
STP9NK50ZFP datasheet
 


Specifications of STP9NK50ZFP

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs850 mOhm @ 3.6A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C7.2AVgs(th) (max) @ Id4.5V @ 100µA
Gate Charge (qg) @ Vgs32nC @ 10VInput Capacitance (ciss) @ Vds910pF @ 25V
Power - Max30WMounting TypeThrough Hole
Package / CaseTO-220FPConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.85 Ohm @ 10 V
Drain-source Breakdown Voltage500 VGate-source Breakdown Voltage+/- 30 V
Continuous Drain Current7.2 APower Dissipation30000 mW
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CContinuous Drain Current Id7.2A
Drain Source Voltage Vds500VOn Resistance Rds(on)850mohm
Rds(on) Test Voltage Vgs10VThreshold Voltage Vgs Typ3.75V
Rohs CompliantYesLead Free Status / RoHS StatusLead free / RoHS Compliant
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ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
V
Drain-source
(BR)DSS
Breakdown Voltage
I
Zero Gate Voltage
DSS
Drain Current (V
GS
I
Gate-body Leakage
GSS
Current (V
= 0)
DS
V
Gate Threshold Voltage
GS(th)
R
Static Drain-source On
DS(on)
Resistance
DYNAMIC
Symbol
Parameter
g
(1)
Forward Transconductance
fs
C
Input Capacitance
iss
Output Capacitance
C
oss
Reverse Transfer
C
rss
Capacitance
C
(3)
Equivalent Output
oss eq.
Capacitance
SWITCHING ON
Symbol
Parameter
t
Turn-on Delay Time
d(on)
Rise Time
t
r
Q
Total Gate Charge
g
Q
Gate-Source Charge
gs
Gate-Drain Charge
Q
gd
SWITCHING OFF
Symbol
Parameter
t
Turn-off Delay Time
d(off)
Fall Time
t
f
t
Off-voltage Rise Time
r(Voff)
t
Fall Time
f
t
Cross-over Time
c
SOURCE DRAIN DIODE
Symbol
Parameter
I
Source-drain Current
SD
I
(2)
Source-drain Current (pulsed)
SDM
V
(1)
Forward On Voltage
SD
t
Reverse Recovery Time
rr
Q
Reverse Recovery Charge
rr
I
Reverse Recovery Current
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
V
.
DSS
STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1
Test Conditions
I
= 1 mA, V
= 0
D
GS
V
= Max Rating
DS
= 0)
V
= Max Rating, T
DS
C
V
= ± 20V
GS
V
= V
, I
= 100µA
DS
GS
D
V
= 10V, I
= 3.6 A
GS
D
Test Conditions
V
= 15 V
I
= 3.6 A
DS
,
D
V
= 25V, f = 1 MHz, V
DS
V
= 0V, V
= 0V to 400V
GS
DS
Test Conditions
V
= 250 V, I
= 3.6 A
DD
D
R
= 4.7
V
= 10 V
G
GS
(Resistive Load see, Figure 3)
V
= 400V, I
= 7.2 A,
DD
D
V
= 10V
GS
Test Conditions
V
= 250 V, I
= 3.6 A
DD
D
R
= 4.7
V
= 10 V
G
GS
(Resistive Load see, Figure 3)
V
= 400V, I
= 7.2 A,
DD
D
R
= 4.7
V
= 10V
G
GS
(Inductive Load see, Figure 5)
Test Conditions
I
= 7.2 A, V
= 0
SD
GS
I
= 7.2 A, di/dt = 100A/µs
SD
V
= 40 V, T
= 150°C
DD
j
(see test circuit, Figure 5)
Min.
Typ.
Max.
500
= 125 °C
50
±10
3
3.75
4.5
0.72
0.85
Min.
Typ.
Max.
5.3
= 0
910
GS
125
30
75
Min.
Typ.
Max.
17
20
32
6
18
Min.
Typ.
Max.
45
22
15
13
30
Min.
Typ.
Max.
7.2
28.8
1.6
238
1.5
12.6
when V
increases from 0 to 80%
oss
DS
Unit
V
1
µA
µA
µA
V
Unit
S
pF
pF
pF
pF
Unit
ns
ns
nC
nC
nC
Unit
ns
ns
ns
ns
ns
Unit
A
A
V
ns
µC
A
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