IRLU3110ZPBF International Rectifier, IRLU3110ZPBF Datasheet

MOSFET N-CH 100V 42A IPAK

IRLU3110ZPBF

Manufacturer Part Number
IRLU3110ZPBF
Description
MOSFET N-CH 100V 42A IPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLU3110ZPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 38A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
2.5V @ 100µA
Gate Charge (qg) @ Vgs
48nC @ 4.5V
Input Capacitance (ciss) @ Vds
3980pF @ 25V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
63A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
11mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.5V
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
16 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
63 A
Power Dissipation
140 W
Mounting Style
SMD/SMT
Gate Charge Qg
34 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLU3110ZPBF
Manufacturer:
IR
Quantity:
6 000
Description
Specifically designed for Industrial applications,
this HEXFET
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Industrial applications
and a wide variety of other applications.
Features
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
D
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
JC
JA
JA
@ T
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
(Tested )
C
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Continuous Drain Current, V
= 25°C Power Dissipation
®
®
Power MOSFET utilizes the latest
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Reflow Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
j
Ã
j
Parameter
Parameter
GS
GS
GS
g
@ 10V
@ 10V
@ 10V
d
ij
(Silicon Limited)
(Silicon Limited)
(Package Limited)
h
G
See Fig.12a, 12b, 15, 16
Typ.
HEXFET
–––
–––
–––
IRLR3110ZPbF
10 lbf
S
D
IRLR3110ZPbF
IRLU3110ZPbF
-55 to + 175
D-Pak
y
Max.
in (1.1N
0.95
300
250
140
110
140
±16
63
45
42
®
R
Power MOSFET
V
DS(on)
y
m)
DSS
Max.
1.05
110
40
IRLU3110ZPbF
PD - 97175B
= 100V
= 14m
I-Pak
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRLU3110ZPBF Summary of contents

Page 1

... Limited 10V (Package Limited Parameter 97175B IRLR3110ZPbF IRLU3110ZPbF ® HEXFET Power MOSFET 100V DSS R = 14m DS(on) S D-Pak I-Pak IRLR3110ZPbF IRLU3110ZPbF Max. Units 250 140 W 0.95 W/°C ±16 V 110 mJ 140 See Fig.12a, 12b 175 °C 300 lbf in (1.1N m) Typ. Max. ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 25° 25V 60µs ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss 1000 C oss ...

Page 5

Limited By Package 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 ...

Page 6

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 0.01 10 0.05 0.10 Allowed avalanche Current vs avalanche 1 pulsewidth, tav, assuming Tstart = 150°C. 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current vs.Pulsewidth 150 TOP Single Pulse BOTTOM 1% Duty Cycle 125 ...

Page 8

D.U.T + ƒ ‚ -  SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 9

5 www.irf.com ,5)5 $   ,5)5   9 ...

Page 10

10 ,5)8 $  5 ,5)8    www.irf.com ...

Page 11

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

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