MOSFET N-CH 75V 160A TO-220

IXTP160N075T

Manufacturer Part NumberIXTP160N075T
DescriptionMOSFET N-CH 75V 160A TO-220
ManufacturerIXYS
SeriesTrenchMV™
IXTP160N075T datasheet
 

Specifications of IXTP160N075T

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs6 mOhm @ 25A, 10VDrain To Source Voltage (vdss)75V
Current - Continuous Drain (id) @ 25° C160AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs112nC @ 10VInput Capacitance (ciss) @ Vds4950pF @ 25V
Power - Max360WMounting TypeThrough Hole
Package / CaseTO-220ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.006 Ohms
Forward Transconductance Gfs (max / Min)100 sDrain-source Breakdown Voltage75 V
Continuous Drain Current160 APower Dissipation360 W
Maximum Operating Temperature+ 175 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CVdss, Max, (v)75
Id(cont), Tc=25°c, (a)160Rds(on), Max, Tj=25°c, (?)0.0060
Ciss, Typ, (pf)4950Qg, Typ, (nc)112
Trr, Typ, (ns)80Trr, Max, (ns)-
Pd, (w)360Rthjc, Max, (k/w)0.42
Package StyleTO-220Lead Free Status / RoHS StatusLead free / RoHS Compliant
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Preliminary Technical Information
TrenchMV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
V
T
= 25°C to 175°C
DSS
J
V
T
= 25°C to 175°C; R
DGR
J
V
Transient
GSM
I
T
= 25°C
D25
C
I
Lead Current Limit, RMS
LRMS
I
T
= 25°C, pulse width limited by T
DM
C
I
T
= 25°C
AR
C
E
T
= 25°C
AS
C
≤ I
, di/dt ≤ 100 A/μs, V
dv/dt
I
S
DM
≤ 175C, R
= 5 Ω
T
J
G
P
T
= 25°C
D
C
T
J
T
JM
T
stg
T
1.6 mm (0.062 in.) from case for 10 s
L
T
Plastic body for 10 seconds
SOLD
M
Mounting torque (TO-3P, TO-220)
d
Weight
TO-220
TO-263
Symbol
Test Conditions
(T
= 25°C unless otherwise specified)
J
= 250 μA
BV
V
= 0 V, I
DSS
GS
D
= 250 μA
V
V
= V
, I
GS(th)
DS
GS
D
= ± 20 V, V
I
V
= 0 V
GSS
GS
DS
I
V
= V
DSS
DS
DSS
V
= 0 V
GS
R
V
= 10 V, I
= 25 A, Notes 1, 2
DS(on)
GS
D
© 2006 IXYS CORPORATION All rights reserved
IXTA160N075T
IXTP160N075T
Maximum Ratings
75
= 1 MΩ
75
GS
± 20
160
75
430
JM
25
750
≤ V
3
DD
DSS
360
-55 ... +175
175
-55 ... +175
300
260
1.13 / 10 Nm/lb.in.
3
2.5
Characteristic Values
Min.
Typ.
Max.
75
2.0
4.0
± 200
T
= 150°C
250
J
5.1
6.0
V
=
75
DSS
I
= 160
D25
6.0 mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤
R
DS(on)
TO-263 (IXTA)
V
V
G
V
S
D (TAB)
TO-220 (IXTP)
A
A
A
A
mJ
G D
S
V/ns
G = Gate
D = Drain
W
S = Source
TAB = Drain
°C
°C
Features
°C
Ultra-low On Resistance
°C
Unclamped Inductive Switching (UIS)
°C
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
g
g
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
V
- 42V Power Bus
V
- ABS Systems
DC/DC Converters and Off-line UPS
nA
Primary Switch for 24V and 48V
μA
Systems
5
μA
High Current Switching
Applications
DS99520 (11/06)
V
A
D (TAB)

IXTP160N075T Summary of contents

  • Page 1

    ... I GS(th ± GSS DSS DS DSS Notes 1, 2 DS(on © 2006 IXYS CORPORATION All rights reserved IXTA160N075T IXTP160N075T Maximum Ratings MΩ ± 20 160 75 430 JM 25 750 ≤ DSS 360 -55 ... +175 175 -55 ... +175 300 260 1. Nm/lb.in. 3 2.5 Characteristic Values Min. Typ. Max. ...

  • Page 2

    ... Characteristic Values Min. Typ. Max Kelvin test contact DS(on) The Technical Specifications 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA160N075T IXTP160N075T TO-263 (IXTA) Outline Pins Gate 2 - Drain Source 4, TAB - Drain nC Dim. Millimeter nC Min. Max. Min. A 4.06 4 ...

  • Page 3

    ... Value D 140 T = 175ºC J 120 100 25º -50 200 250 300 IXTA160N075T IXTP160N075T Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized 80A Value DS(on) D vs. Junction Temperature V = 10V 160A 80A D ...

  • Page 4

    ... T = 25º 1.1 1.2 1.3 0 1.00 0.10 0. 0.0001 IXTA160N075T IXTP160N075T Fig. 8. Transconductance 40ºC J 25ºC 150ºC 50 100 150 200 I - Amperes D Fig. 10. Gate Charge V = 37V 25A 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.001 0.01 0.1 ...

  • Page 5

    ... Switching Times vs. Junction Temperature 50A Switching Times vs. Gate Resistance 90 130 86 120 82 110 78 100 IXTA160N075T IXTP160N075T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current T = 25º Ω 10V 38V 125º Amperes D Fig. 16. Resistive Turn-off - - - - d(off Ω 10V 38V 25A 50A 105 T - Degrees Centigrade J Fig ...