IRF3710STRLPBF International Rectifier, IRF3710STRLPBF Datasheet

MOSFET N-CH 100V 57A D2PAK

IRF3710STRLPBF

Manufacturer Part Number
IRF3710STRLPBF
Description
MOSFET N-CH 100V 57A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet
1.IRF3710LPBF.pdf (10 pages)

Specifications of IRF3710STRLPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
23 mOhm @ 28A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
57A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
3130pF @ 25V
Power - Max
200W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.023Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Drain Current (max)
57A
Power Dissipation
200W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
D2PAK
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
57 A
Mounting Style
SMD/SMT
Gate Charge Qg
86.7 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF3710STRLPBF
IRF3710STRLPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF3710STRLPBF
Manufacturer:
IR
Quantity:
15 000
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
IRF3710STRLPBF
Manufacturer:
IR
Quantity:
8 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF3710STRLPBF
Manufacturer:
IR
Quantity:
20 000
Company:
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Part Number:
IRF3710STRLPBF
Quantity:
800
Company:
Amily Shenzhen XNWY Technology Co., Ltd Amily Shenzhen XNWY Technology Co., Ltd
Part Number:
IRF3710STRLPBF
0
Company:
H&T Electronics H&T Electronics
Part Number:
IRF3710STRLPBF
Quantity:
31 200
Description
Absolute Maximum Ratings
Thermal Resistance
l
l
l
l
l
l
l
Advanced HEXFET
advanced processing techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable device for use in
a wide variety of applications.
The D
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF3710L) is available for low-profile applications.
www.irf.com
I
I
I
P
V
I
E
dv/dt
T
T
R
R
D
D
DM
AR
J
STG
D
GS
AR
θJC
θJA
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
2
C
C
C
Pak is a surface mount power package capable of accommodating die
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
®
Junction-to-Case
Junction-to-Ambient
Power MOSFETs from International Rectifier utilize
Parameter
Parameter

(PCB Mounted,steady-state)**
‡
ƒ‡
GS
GS

@ 10V
@ 10V
‡
‡
G
2
Pak is
Typ.
300 (1.6mm from case )
–––
–––
IRF3710SPbF
IRF3710LPbF
HEXFET
-55 to + 175
S
D
IRF3710SPbF
Max.
180
200
± 20
1.3
5.8
57
40
28
20
D
2
Pak
®
R
Power MOSFET
V
DS(on)
Max.
0.75
40
DSS
I
D
PD - 95108A
= 57A
IRF3710LPbF
= 100V
= 23mΩ
TO-262
Units
Units
W/°C
°C/W
V/ns
mJ
°C
W
A
V
A
1

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IRF3710STRLPBF Summary of contents

Page 1

... Description ® Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 16V 10V 7.0V 6.0V 5.0V 100 4.5V 4.0V BOTTOM 3. 20µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.00 100. ...

Page 4

0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss Crss 100 10 ...

Page 5

T , Case Temperature C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 SINGLE PULSE 0.02 (THERMAL RESPONSE) 0.01 0.01 ...

Page 6

D.U 20V V GS 0.01 Ω Charge 6 550 15V 440 DRIVER + 330 ...

Page 7

D.U.T + ‚ -  Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 8

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Page 9

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information @Y6HQ @) UCDTÃDTÃ6IÃDS " " PUÃ8P9@Ã &'( 6TT@H7 @9ÃPIÃXXÃ (Ã ((& DIÃUC@Ã6TT@H7 `Ã DI@ÃÅ8Å 5 www.irf.com Q6SUÃIVH7@S DIU@SI6UDPI6 S@8UDAD@S PBP 96U@Ã8P9@ `@6SÃ&Ã2Ã ((& 6TT@H7 ` X@@FÃ ( ...

Page 10

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE ...

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