IXFA7N80P IXYS, IXFA7N80P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFA7N80P
Manufacturer Part Number
IXFA7N80P
Description
MOSFET N-CH 800V 7A TO-263
Specifications of IXFA7N80P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.44 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
32nC @ 10V
Input Capacitance (ciss) @ Vds
1890pF @ 25V
Power - Max
200W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.4 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
7 A
Power Dissipation
200 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
7
Rds(on), Max, Tj=25°c, (?)
1.44
Ciss, Typ, (pf)
1800
Qg, Typ, (nc)
32
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
200
Rthjc, Max, (ºc/w)
0.62
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-220, TO-3P)
TO-220
TO-263
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
TM
= 0 V, I
= V
= ±30 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
DSS
HiPerFET
, I
D
D
D
= 250μA
= 1 mA
G
= 0.5 I
DS
= 10 Ω
= 0 V
D25
GS
= 1 MΩ
DD
T
≤ V
J
= 125°C
DSS
JM
IXFA 7N80P
IXFI 7N80P
IXFP 7N80P
,
800
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
± 30
± 40
800
800
300
200
150
300
260
2.5
18
20
10
7
4
3
±100
500
1.44
Max.
5.0
25
V/ns
mJ
mJ
nA
μA
μA
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
g
V
I
R
t
Leaded TO-263 (IXFI)
TO-220 (IXFP)
G = Gate
S = Source
Features
Advantages
TO-263 (IXFA)
D25
rr
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
DS(on)
DSS
G
D
G
= 800
=
≤ ≤ ≤ ≤ ≤ 1.44
≤ ≤ ≤ ≤ ≤ 250
S
D
G
S
D = Drain
TAB = Drain
S
7
DS99597E(08/06)
(TAB)
(TAB)
(TAB)
ns
A
Ω Ω Ω Ω Ω
V
Related parts for IXFA7N80P
IXFA7N80P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 μs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFA 7N80P IXFI 7N80P IXFP 7N80P Maximum Ratings 800 = 1 MΩ 800 GS ± 30 ± 300 ≤ DSS 200 -55 ... +150 150 -55 ...
... R TO-263 (IXFA) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 IXFA7N80P IXFI7N80P IXFP7N80P Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. , pulse test 5 9 ...
... Fig. 3. Output Characteristics @ 125º Volts DS Fig Normalized to I DS(on) vs. Drain Current 2 10V 2.6 GS 2.4 2.2 2 1.8 1.6 1.4 1 Amperes D © 2006 IXYS All rights reserved IXFA7N80P IXFI7N80P IXFP7N80P 10V 3 10V GS 6V 2.8 2 1.6 1.2 0.8 0.4 - 3.5A Value 125ºC J ...
... Fig. 9. Forward Voltage Drop of Intrinsic Diode 125º 0.3 0.4 0.5 0.6 0 Volts SD Fig. 11. Capacitance 10,000 MHz 1,000 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. IXFA7N80P IXFI7N80P IXFP7N80P 5.2 5.4 5.6 5 25º 0.8 0 1.0 C iss C oss 0.1 C rss ...
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