STF10NM60N STMicroelectronics, STF10NM60N Datasheet

MOSFET N-CH 600V 8A TO-220FP

STF10NM60N

Manufacturer Part Number
STF10NM60N
Description
MOSFET N-CH 600V 8A TO-220FP
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STF10NM60N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
550 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
540pF @ 50V
Power - Max
25W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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STF10NM60N 10NM60N
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STF10NM60N$Z2
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STF10NM60N(10NM60N)
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STF10NM60N,10NM60N
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STF10NM60N-PBF
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Features
Application
Switching applications
Description
These devices are N-channel 600 V Power
MOSFET realized using the second generation of
MDmesh
the multiple drain process to STMicroelectronics’
well-known PowerMESH
structure. The resulting product offers improved
on-resistance, low gate charge, high dv/dt
capability and excellent avalanche characteristics.
Table 1.
November 2010
STD10NM60N
STP10NM60N
STU10NM60N
STF10NM60N
Order codes
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
N-channel 600 V, 0.53 Ω , 10 A, DPAK, TO-220, TO-220FP, IPAK
STD10NM60N
STU10NM60N
STF10NM60N
STP10NM60N
Order codes
technology. It applies the benefits of
Device summary
@T
650 V
V
DSS
J
max
< 0.55 Ω
R
horizontal layout
max.
DS(on)
10NM60N
10NM60N
10NM60N
10NM60N
Marking
10 A
I
D
Doc ID 15764 Rev 5
70 W
25 W
70 W
P
STP10NM60N, STU10NM60N
STD10NM60N, STF10NM60N
w
Figure 1.
MDmesh™ II Power MOSFET
TO-220
TO-220FP
Package
TO-220
DPAK
IPAK
1
Internal schematic diagram
2
3
IPAK
1
2
3
Tape and reel
Packaging
Tube
Tube
Tube
TO-220FP
DPAK
www.st.com
1
1
3
2
1/17
3
17

Related parts for STF10NM60N

STF10NM60N Summary of contents

Page 1

... PowerMESH horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics. Table 1. Device summary Order codes STD10NM60N STF10NM60N STP10NM60N STU10NM60N November 2010 STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N MDmesh™ II Power MOSFET TO-220 Figure 1. ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Doc ID 15764 Rev ...

Page 3

... STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Gate- source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT (3) dv/dt Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all ...

Page 4

... Q Total gate charge g Q Gate-source charge gs Q Gate-drain charge time related is defined as a constant equivalent capacitance giving the same charging time as C oss eq. when V increases from 4/17 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Parameter Test conditions mA max rating max rating ± ...

Page 5

... STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Table 7. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off-delay time d(off) t Fall time f Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... Figure 6. Safe operating area for DPAK, IPAK Figure ( Tj=150°C 0.1 Tc=25°C Sinlge pulse 0.01 10 0.1 1 6/17 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Figure 3. AM03944v1 1µs 10µs 100µs 1ms 10ms V (V) 100 DS Figure 5. AM03945v1 10µs 100µs 1ms 10ms 100 ...

Page 7

... STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Figure 8. Output characteristics I D (A) V =10V Figure 10. Normalized BV BV DSS (norm) I =1mA 1.07 D 1.05 1.03 1.01 0.99 0.97 0.95 0.93 -50 - Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations V GS (V) V =480V = Figure 9. AM03947v1 ( temperature Figure 11. Static drain-source on resistance ...

Page 8

... Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.10 1.00 0.90 0.80 0.70 -50 - 8/17 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Figure 15. Normalized on resistance vs AM03953v1 R DS(on) (norm) I =250µ (°C) 100 J Doc ID 15764 Rev 5 temperature 2.1 I =4A D 1.9 V =10V GS 1.7 1.5 1.3 1 ...

Page 9

... STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N 3 Test circuits Figure 16. Switching times test circuit for resistive load D.U. Figure 18. Test circuit for inductive load switching and diode recovery times FAST L=100μH G D.U.T. DIODE Ω Figure 20. Unclamped inductive waveform Figure 17. Gate charge test circuit 3 ...

Page 10

... Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. 10/17 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Doc ID 15764 Rev 5 ® ...

Page 11

... STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Table 9. TO-220FP mechanical data Dim Dia Figure 22. TO-220FP drawing A Min. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 28.6 9.8 2.9 15 Dia Doc ID 15764 Rev 5 Package mechanical data mm Typ. Max. 4.6 2.7 2.75 0.7 1 1.70 1.70 5 ...

Page 12

... Package mechanical data DIM 12/17 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N TO-252 (DPAK) mechanical data mm Doc ID 15764 Rev 0068772_G ...

Page 13

... STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Dim TO-220 type A mechanical data Min A 4.40 b 0.61 b1 1.14 c 0.48 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 ∅P 3.75 Q 2.65 Doc ID 15764 Rev 5 Package mechanical data mm Typ Max 4.60 0.88 1.70 0.70 15.75 1.27 10.40 2 ...

Page 14

... Package mechanical data DIM (L1 14/17 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N TO-251 (IPAK) mechanical data mm. min. typ 2.20 0.90 0.64 5.20 0.45 0.48 6.00 6.40 2.28 4.40 16.10 9.00 0.80 0. Doc ID 15764 Rev 5 max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60 4 ...

Page 15

... STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 6.8 B0 10.4 10.6 B1 12.1 D 1.5 D1 1.5 E 1.65 1.85 F 7.4 K0 2.55 2.75 P0 3.9 P1 7 15.7 16.3 TAPE AND REEL SHIPMENT inch MIN. ...

Page 16

... Revision history 6 Revision history 12 Table 10. Document revision history Date 10-Jun-2009 12-Jan-2010 31-Mar-2010 17-Sep-2010 24-Nov-2010 16/17 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Revision 1 First release 2 Figure 4: Safe operating area for TO-220FP 3 Features have been corrected 4 Content reworked to improve readability 5 Corrected I value D Doc ID 15764 Rev 5 ...

Page 17

... STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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