IXTA160N075T IXYS, IXTA160N075T Datasheet - Page 4

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IXTA160N075T

Manufacturer Part Number
IXTA160N075T
Description
MOSFET N-CH 75V 160A TO-263
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTA160N075T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
112nC @ 10V
Input Capacitance (ciss) @ Vds
4950pF @ 25V
Power - Max
360W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.006 Ohms
Drain-source Breakdown Voltage
75 V
Continuous Drain Current
160 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
75
Id(cont), Tc=25°c, (a)
160
Rds(on), Max, Tj=25°c, (?)
0.0060
Ciss, Typ, (pf)
4950
Qg, Typ, (nc)
112
Trr, Typ, (ns)
80
Trr, Max, (ns)
-
Pd, (w)
360
Rthjc, Max, (k/w)
0.42
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
270
240
210
180
150
120
270
240
210
180
150
120
100
90
60
30
90
60
30
0
0
0.4
3
0
f = 1 MHz
0.5
3.5
5
Fig. 9. Forward Voltage Drop of
0.6
10
4
Fig. 7. Input Admittance
Fig. 11. Capacitance
0.7
Intrinsic Diode
T
4.5
J
15
V
V
V
= 150ºC
GS
SD
DS
0.8
- Volts
- Volts
- Volts
20
5
C iss
C oss
C rss
0.9
T
J
= -40ºC
150ºC
25
5.5
25ºC
T
J
1
= 25ºC
30
6
1.1
35
6.5
1.2
40
1.3
7
1.00
0.10
0.01
140
120
100
80
60
40
20
10
0.0001
0
9
8
7
6
5
4
3
2
1
0
0
0
10
V
I
I
D
G
DS
Fig. 12. Maximum Transient Thermal
= 25A
= 10mA
20
50
= 37V
0.001
Fig. 8. Transconductance
30
Q
Pulse Width - Seconds
Fig. 10. Gate Charge
100
G
40
- NanoCoulombs
I
0.01
D
Impedance
- Amperes
50
150
60
T
IXTP160N075T
IXTA160N075T
J
0.1
70
= - 40ºC
150ºC
25ºC
200
80
90
1
100 110 120
250
10
300

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