IRF2807PBF International Rectifier, IRF2807PBF Datasheet

MOSFET N-CH 75V 82A TO-220AB

IRF2807PBF

Manufacturer Part Number
IRF2807PBF
Description
MOSFET N-CH 75V 82A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRF2807PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
13 mOhm @ 43A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
82A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
160nC @ 10V
Input Capacitance (ciss) @ Vds
3820pF @ 25V
Power - Max
230W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
82 A
Gate Charge, Total
160 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
230 W
Resistance, Drain To Source On
13 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
49 ns
Time, Turn-on Delay
13 ns
Transconductance, Forward
38 S
Voltage, Breakdown, Drain To Source
75 V
Voltage, Forward, Diode
1.2 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
82 A
Mounting Style
Through Hole
Gate Charge Qg
106.7 nC
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.013Ohm
Drain-source On-volt
80V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF2807PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF2807PBF
Manufacturer:
IR
Quantity:
30 000
Part Number:
IRF2807PBF
Manufacturer:
IR
Quantity:
21 000
Part Number:
IRF2807PBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF2807PBF
0
Company:
Part Number:
IRF2807PBF
Quantity:
8 000
Company:
Part Number:
IRF2807PBF
Quantity:
10
Company:
Part Number:
IRF2807PBF
Quantity:
82 000
Thermal Resistance
Absolute Maximum Ratings
Advanced HEXFET
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts.
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
www.irf.com
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Description
R
R
R
I
I
I
P
V
I
E
dv/dt
T
T
D
D
DM
AR
J
STG
D
GS
AR
θJC
θCS
θJA
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
C
C
C
= 25°C
= 100°C
= 25°C
Peak Diode Recovery dv/dt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
®
Power MOSFETs from International
Parameter
Parameter

The low thermal

ƒ
GS
GS

@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
0.50
–––
–––
10 lbf•in (1.1N•m)
HEXFET
-55 to + 175
IRF2807PbF
D
S
TO-220AB
Max.
82
280
230
± 20
1.5
5.9
58
43
23
®
R
Power MOSFET
Max.
DS(on)
0.65
V
–––
62
I
D
DSS
= 82A‡
PD - 94970A
= 13mΩ
= 75V
Units
Units
W/°C
°C/W
V/ns
mJ
°C
W
A
V
A
1

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IRF2807PBF Summary of contents

Page 1

... R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com G The low thermal @ 10V GS @ 10V GS    ƒ 300 (1.6mm from case ) Typ. 0. 94970A IRF2807PbF ® HEXFET Power MOSFET 75V DSS R = 13mΩ DS(on 82A‡ TO-220AB Max. Units ‡ 280 ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° ...

Page 4

0V MHZ C iss = 6000 C rss = oss = 5000 Ciss 4000 3000 Coss 2000 ...

Page 5

LIMITED BY PACKAGE 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 SINGLE PULSE 0.02 ...

Page 6

D.U 20V V GS 0.01 Ω Charge 6 600 15V 500 DRIVER 400 + ...

Page 7

D.U.T + ‚ -  Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 8

EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 EMBLY LINE "C" Note: "P" sembly line position indicates "Lead - Free" TO-220AB package is not recommended ...

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