IXFP12N50PM IXYS, IXFP12N50PM Datasheet

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IXFP12N50PM

Manufacturer Part Number
IXFP12N50PM
Description
MOSFET N-CH 500V 6A TO-220
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFP12N50PM

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
5.5V @ 1mA
Gate Charge (qg) @ Vgs
29nC @ 10V
Input Capacitance (ciss) @ Vds
1830pF @ 25V
Power - Max
50W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.55 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
6 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
6
Rds(on), Max, Tj=25°c, (?)
0.5
Ciss, Typ, (pf)
1830
Qg, Typ, (nc)
29
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
50
Rthjc, Max, (ºc/w)
2.5
Package Style
TO-220 Overmolded
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFP12N50PM
Manufacturer:
IXYS
Quantity:
18 000
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
Polar
HiPerFET
(Electrically Isolated Tab)
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
TM
T
T
Transient
T
T
T
T
I
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
V
V
V
V
V
Test Conditions
Continuous
Test Conditions
S
V
Power MOSFET
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±30V, V
= V
= 0V
= 10V, I
TM
DM
GS
, V
DSS
, I
D
DD
D
D
= 250μA
= 1mA
= 6A, Note 1
≤ V
DS
= 0V
DSS
, T
J
GS
=150°C
= 1 MΩ
T
J
= 125°C
JM
IXFP12N50PM
Characteristic Values
500
Maximum Ratings
- 55 ... +150
3.0
- 55 ... +150
Min.
1.13/10
± 30
± 40
Typ.
500
500
600
150
300
260
2.5
30
12
10
50
6
Nm/lb.in.
±100 nA
Max.
250 μA
500 mΩ
5.5
5 μA
V/ns
mJ
°C
°C
°C
°C
°C
V
W
V
V
V
V
V
A
A
A
g
V
I
R
t
OVERMOLDED TO-220
(IXFP...M) OUTLINE
G = Gate
S = Source
Features
Advantages
D25
rr
Plastic overmolded tab for electrical
isolation
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
G
DS(on)
DSS
D
S
= 6A
= 500V
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
D = Drain
300ns
500mΩ Ω Ω Ω Ω
Isolated Tab
DS99510F(04/08)

Related parts for IXFP12N50PM

IXFP12N50PM Summary of contents

Page 1

... GS(th ±30V GSS DSS DS DSS 10V 6A, Note 1 DS(on © 2008 IXYS CORPORATION, All rights reserved IXFP12N50PM Maximum Ratings 500 = 1 MΩ 500 GS ± 30 ± 600 =150° ... +150 150 - 55 ... +150 300 260 1.13/10 2.5 Characteristic Values Min. Typ. 500 3 125° ...

Page 2

... DSS D 10 Characteristic Values (T = 25°C unless otherwise specified) J Min. Typ. JM 2.8 18.2 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFP12N50PM ISOLATED TO-220 (IXFP...M) Max Terminals Gate 2.5 °C Drain (Collector Source (Emitter) Max 1.5 ...

Page 3

... I - Amperes D © 2008 IXYS CORPORATION, All rights reserved º 10V º 10V Volts = 6A Value D º 125 C J º IXFP12N50PM Fig. 2. Extended Output Characteristics º 10V Volts D S Fig Normalized to I DS(on ) vs. Junction Temperature 2.6 2 2.2 2.0 1.8 1 12A D 1.4 1 ...

Page 4

... Volts S D Fig. 11. Capacitance 10000 MHz 1000 100 IXYS reserves the right to change limits, test conditions, and dimensions. 6.0 6.5 7.0 7 º 0.8 0.9 1.0 C iss C oss C rss Volts IXFP12N50PM Fig. 8. Transconductance º º 125 º Amperes D Fig. 10. Gate Charge 250V ...

Page 5

... IXYS CORPORATION, All rights reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXFP12N50PM 0.1 1 IXYS REF: T_12N50P(4J)4-14-08-D 10 ...

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