STP9NK65Z STMicroelectronics, STP9NK65Z Datasheet - Page 4

• Manufacturer Part Number: STP9NK65Z
• Description: MOSFET N-CH 650V 6.4A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP9NK65Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 3.2A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 6.4A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 1145pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
CASE
R
V
oss eq
(BR)DSS
g
increases from 0 to 80% V
I
C
I
C
GS(th)
DS(on)
C
Q
Q
DSS
GSS
fs
Q
oss eq.
oss
iss
rss
gs
gd
g
(1)
=25°C unless otherwise specified)
(2)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
Dynamic
On/off states
Parameter
Parameter
DS
= 0)
DSS
GS
= 0)
V
V
V
V
V
V
(see
I
V
V
V
V
D
GS
GS
GS
GS
GS
DS
DS
DS
DS
DS
DD
= 1 mA, V
= 15 V
= 25 V, f = 1 MHz,
= Max rating
= Max rating, @125 °C
= ± 20 V
= V
= 10 V, I
= 0
= 0, V
= 520 V, I
= 10 V
Figure
Test conditions
Test conditions
GS
, I
DS
,
18)
I
GS
D
D
D
= 0 to 400 V
D
= 100 µA
= 3.2 A
= 3.2 A
= 0
= 6.4 A,
STP9NK65Z - STP9NK65ZFP
Min.
Min.
650
3
1145
Typ.
Typ.
3.75
130
7.5
28
55
41
22
6
1
oss
Max.
Max.
±10
4.5
1.2
50
1
when V
DS
Unit
Unit
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
V
V
Ω
S