STP9NK65Z STMicroelectronics, STP9NK65Z Datasheet - Page 5

MOSFET N-CH 650V 6.4A TO-220

STP9NK65Z

Manufacturer Part Number
STP9NK65Z
Description
MOSFET N-CH 650V 6.4A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STP9NK65Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 3.2A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
6.4A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
41nC @ 10V
Input Capacitance (ciss) @ Vds
1145pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.2 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
7 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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STP9NK65Z - STP9NK65ZFP
Table 7.
Table 8.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 9.
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
BV
Symbol
Symbol
Symbol
I
V
SDM
t
t
I
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
SD
d(on)
d(off)
RRM
GSO
I
Q
SD
t
t
t
rr
r
f
rr
(2)
(1)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown voltage
Switching times
Gate-source zener diode
Source drain diode
Parameter
Parameter
Parameter
V
R
(see
V
R
(See
I
I
V
(see
Igs=±1 mA
(open drain)
di/dt = 100 A/µs
SD
SD
DD
DD
DD
G
G
= 4.7 Ω V
= 4.7 Ω V
= 6.4 A, V
= 6.4 A,
Test conditions
Test conditions
Test conditions
= 325 V, I
= 325 V, I
= 50 V, T
Figure
Figure
Figure
17)
19)
17)
GS
GS
GS
j
D
D
= 150 °C
= 3.2 A
= 10 V
= 3.2 A
= 10 V
= 0
Electrical characteristics
Min.
Min.
Min.
30
Typ.
2600
Typ.
Typ.
400
20
12
45
15
13
Max.
Max.
Max.
25.6
6.4
1.6
Unit
Unit
Unit
nC
ns
ns
ns
ns
ns
V
A
A
V
A
5/15

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