STP9NK65Z STMicroelectronics, STP9NK65Z Datasheet - Page 9

MOSFET N-CH 650V 6.4A TO-220

STP9NK65Z

Manufacturer Part Number
STP9NK65Z
Description
MOSFET N-CH 650V 6.4A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STP9NK65Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 3.2A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
6.4A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
41nC @ 10V
Input Capacitance (ciss) @ Vds
1145pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.2 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
7 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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STP9NK65Z - STP9NK65ZFP
3
Figure 17. Switching times test circuit for
Figure 19. Test circuit for inductive load
Figure 21. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuits
Figure 18. Gate charge test circuit
Figure 20. Unclamped Inductive load test
Figure 22. Switching time waveform
circuit
Test circuits
9/15

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