STP9NK70Z STMicroelectronics, STP9NK70Z Datasheet - Page 2

MOSFET N-CH 700V 7.5A TO-220

STP9NK70Z

Manufacturer Part Number
STP9NK70Z
Description
MOSFET N-CH 700V 7.5A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STP9NK70Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 4A, 10V
Drain To Source Voltage (vdss)
700V
Current - Continuous Drain (id) @ 25° C
7.5A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
68nC @ 10V
Input Capacitance (ciss) @ Vds
1370pF @ 25V
Power - Max
115W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
4A
Drain Source Voltage Vds
700V
On Resistance Rds(on)
1ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
1.2 Ohms
Drain-source Breakdown Voltage
700 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
7.5 A
Power Dissipation
115 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z
ABSOLUTE MAXIMUM RATINGS
(
(1) I
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
2/14
l
) Pulse width limited by safe operating area
V
Rthj-case
Rthj-amb
dv/dt (1)
Rthj-pcb
Symbol
Symbol
Symbol
SD
BV
ESD(G-S)
I
V
DM
P
V
V
V
E
T
I
DGR
I
I
TOT
AR
T
T
ISO
stg
GSO
DS
GS
AS
D
D
7.5A, di/dt 200
j
l
(
l
)
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Gate-Source Breakdown
Voltage
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max
(When mounted on minimum Footprint)
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Operating Junction Temperature
Storage Temperature
µ
A, V
Parameter
j
DD
= 25 °C, I
V
(BR)DSS
D
Parameter
C
GS
= I
, T
= 25°C
GS
j
= 20 k )
j
max)
AR
Parameter
= 0)
T
, V
JMAX.
DD
C
C
Igs=± 1mA (Open Drain)
= 25°C
= 100°C
= 50 V)
Test Conditions
D
TO-220
I
2
2
PAK / I
PAK
TO-220 /
0.92
115
7.5
4.7
30
-
1.09
2
PAK
D
2
30
PAK
62.5
Min.
-55 to 150
-55 to 150
30
Value
TO-220FP
4000
± 30
700
700
4.5
7.5 (*)
4.7 (*)
30 (*)
2500
300
0.28
35
Max Value
TO-220FP
230
Typ.
7.5
3.6
TO-247
1.25
156
7.5
4.7
30
Max.
TO-247
0.8
30
W/°C
Unit
V/ns
°C
°C
°C/W
°C/W
°C/W
Unit
W
Unit
V
V
V
A
A
A
V
V
mJ
°C
A
V

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