STP9NK70ZFP STMicroelectronics, STP9NK70ZFP Datasheet - Page 3

MOSFET N-CH 700V 7.5A TO-220FP

STP9NK70ZFP

Manufacturer Part Number
STP9NK70ZFP
Description
MOSFET N-CH 700V 7.5A TO-220FP
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STP9NK70ZFP

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 4A, 10V
Drain To Source Voltage (vdss)
700V
Current - Continuous Drain (id) @ 25° C
7.5A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
68nC @ 10V
Input Capacitance (ciss) @ Vds
1370pF @ 25V
Power - Max
35W
Mounting Type
Through Hole
Package / Case
TO-220FP
Transistor Polarity
N Channel
Continuous Drain Current Id
4A
Drain Source Voltage Vds
700V
On Resistance Rds(on)
1ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
1.2 Ohms
Drain-source Breakdown Voltage
700 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
7.5 A
Power Dissipation
35 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
C
V
Symbol
Symbol
Symbol
Symbol
Symbol
I
R
oss eq.
V
V
SDM
(BR)DSS
g
t
t
I
t
I
I
C
SD
DS(on)
C
r(Voff)
GS(th)
C
d(on)
Q
Q
fs
d(off)
RRM
GSS
I
2. Pulse width limited by safe operating area.
3. C
DSS
Q
Q
SD
t
t
oss
t
t
t
rss
iss
rr
gs
gd
c
r
f
f
(1)
rr
g
(1)
V
(2)
DSS
oss eq.
(3)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z
Parameter
Parameter
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
V
V
V
V
V
V
R
(Resistive Load see, Figure 3)
V
V
I
I
V
(see test circuit, Figure 5)
V
R
(Resistive Load see, Figure 3)
V
R
(Inductive Load see, Figure 5)
D
V
SD
SD
DS
DS
GS
DS
GS
DS
GS
DD
DD
GS
DD
G
DD
DD
G
G
DS
= 1 mA, V
= 4.7
= 4.7
= 4.7
= 7.5 A, V
= 8 A, di/dt = 100A/µs
= Max Rating
= Max Rating, T
= V
= 15 V
= ± 20V
= 10V, I
= 0V, V
= 350 V, I
= 560V, I
= 10V
= 25V, T
= 350 V, I
= 350 V, I
= 25V, f = 1 MHz, V
Test Conditions
Test Conditions
Test Conditions
Test Conditions
Test Conditions
GS
, I
,
V
V
V
DS
I
D
GS
D
GS
GS
D
j
GS
D
GS
= 4 A
D
= 150°C
D
D
= 100µA
= 4 A
= 0V to 560 V
= 8 A,
= 0
= 10 V
= 10 V
= 4 A
= 4 A
= 8 A,
= 10V
= 0
C
= 125 °C
GS
= 0
Min.
Min.
Min.
Min.
Min.
700
3
oss
when V
1370
Typ.
3.75
Typ.
Typ.
Typ.
Typ.
19.5
143
570
1.0
5.3
5.2
32
90
22
17
48
10
27
45
13
19
11
7
DS
increases from 0 to 80%
Max.
Max.
Max.
Max.
Max.
±10
4.5
1.2
7.5
1.6
50
68
30
1
Unit
Unit
Unit
Unit
Unit
µA
µA
µA
nC
nC
nC
µC
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
3/14

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