IXTA160N075T7 IXYS, IXTA160N075T7 Datasheet - Page 2

• Manufacturer Part Number: IXTA160N075T7
• Description: MOSFET N-CH 75V 160A TO-263-7
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTA160N075T7

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 112nC @ 10V
• Input Capacitance (ciss) @ Vds: 4950pF @ 25V
• Power - Max: 360W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Configuration: Single Quint Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.006 Ohms
• Drain-source Breakdown Voltage: 75 V
• Continuous Drain Current: 160 A
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 75
• Id(cont), Tc=25°c, (a): 160
• Rds(on), Max, Tj=25°c, (?): 0.0060
• Ciss, Typ, (pf): 4950
• Qg, Typ, (nc): 112
• Trr, Typ, (ns): 80
• Trr, Max, (ns): -
• Pd, (w): 360
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-263 (7-lead)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
Source-Drain Diode
Symbol
T
I
I
V
t
Notes: 1.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
S
d(on)
d(off)
f
SM
r
rr
fs
J
iss
oss
thJC
SD
rss
g(on)
gs
gd
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
J
= 25° C unless otherwise specified)
= 25° C unless otherwise specified)
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %.
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Pulse width limited by T
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= 25 A, V
= 25 A, -di/dt = 100 A/µs
= 40 V, V
= 10 V; I
= 5 Ω (External)
= 10 V, V
PRELIMINARY TECHNICAL INFORMATION
= 0 V
= 0 V, V
= 10 V, V
GS
D
DS
GS
DS
DS
= 60 A, Note 1
= 0 V, Note 1
= 25 V, f = 1 MHz
= 0 V
= 0.5 V
= 0.5 V
4,835,592
4,850,072
4,881,106
DSS
DSS
JM
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 25 A
= 25 A
5,049,961
5,063,307
5,187,117
Characteristic Values
Min.
Min.
5,237,481
5,381,025
5,486,715
65
Characteristic Values
4950
Typ.
Typ.
100
790
145
112
29
64
60
60
30
30
80
6,162,665
6,259,123 B1
6,306,728 B1
Max.
Max.
0.42 °C/W
160
430
1.0
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
n s
ns
ns
ns
ns
S
A
V
A
TO-263 (7-lead) (IXTA 7) Outline
6,683,344
6,710,405B2
6,710,463
Pins: 1 - Gate
IXTA160N075T7
2, 3 - Source
4 - Drain
5,6,7 - Source
Tab (8) - Drain
6,727,585
6,759,692
6771478 B2
7,005,734 B2
7,063,975 B2
7,071,537