IXTA160N075T7 IXYS, IXTA160N075T7 Datasheet - Page 5

MOSFET N-CH 75V 160A TO-263-7

IXTA160N075T7

Manufacturer Part Number
IXTA160N075T7
Description
MOSFET N-CH 75V 160A TO-263-7
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTA160N075T7

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
112nC @ 10V
Input Capacitance (ciss) @ Vds
4950pF @ 25V
Power - Max
360W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (6 leads + tab)
Configuration
Single Quint Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.006 Ohms
Drain-source Breakdown Voltage
75 V
Continuous Drain Current
160 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
75
Id(cont), Tc=25°c, (a)
160
Rds(on), Max, Tj=25°c, (?)
0.0060
Ciss, Typ, (pf)
4950
Qg, Typ, (nc)
112
Trr, Typ, (ns)
80
Trr, Max, (ns)
-
Pd, (w)
360
Rthjc, Max, (k/w)
0.42
Package Style
TO-263 (7-lead)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2006 IXYS CORPORATION All rights reserved
100
90
80
70
60
50
40
30
20
10
62
60
58
56
54
52
50
48
46
44
42
75
70
65
60
55
50
45
40
35
30
25
20
15
25
4
25
t
R
V
Switching Times vs. Gate Resistance
t
T
V
f
Switching Times vs. Drain Current
G
DS
r
J
35
DS
6
= 125ºC, V
= 5 Ω , V
Rise Time vs. Junction Temperature
= 38V
= 38V
I
30
D
Fig. 17. Resistive Turn-off
Fig. 15. Resistive Turn-on
45
= 25A
t
8
d(off)
t
GS
Fig. 13. Resistive Turn-on
d(on)
= 10V
GS
- - - -
I D - Amperes
T
55
10
R
- - - -
J
= 10V
35
G
- Degrees Centigrade
I
D
- Ohms
= 50A
65
T
12
T
J
= 125ºC
J
T
= 25ºC
75
T
J
40
I
D
J
14
= 25ºC
= 125ºC
= 25A
85
16
45
95
I
D
R
V
V
18
= 50A
G
GS
DS
105
= 5 Ω
= 38V
= 10V
50
20
115
90
86
82
78
74
70
66
62
58
54
50
42
40
38
36
34
32
30
28
26
24
125
130
120
110
100
62
60
58
56
54
52
50
48
46
44
42
90
80
70
60
50
40
80
70
60
50
40
30
20
10
25
25
4
Switching Times vs. Junction Temperature
Switching Times vs. Gate Resistance
t
R
V
t
T
V
35
R
V
V
f
G
DS
f
J
DS
G
GS
DS
6
= 125ºC, V
= 5 Ω , V
= 5 Ω
= 38V
= 38V
= 38V
= 10V
45
Fig. 18. Resistive Turn-off
Fig. 16. Resistive Turn-off
30
t
T
d(off)
8
Rise Time vs. Drain Current
J
GS
t
Fig. 14. Resistive Turn-on
d(off)
- Degrees Centigrade
55
GS
- - - -
= 10V
- - - -
R
10
= 10V
65
G
I
D
I
- Ohms
D
35
I
- Amperes
= 25A
D
12
75
= 50A
IXTA160N075T7
I
85
D
14
= 25A
IXYS REF: T_160N075T (4V) 6-16-06.xls
40
95
T
T
16
J
J
= 25ºC
= 125ºC
105 115 125
I
D
= 50A
18
45
20
230
210
190
170
150
130
110
90
70
50
85
82
79
76
73
70
67
64
61
58
55
50

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