STP36NF06L STMicroelectronics, STP36NF06L Datasheet - Page 8

• Manufacturer Part Number: STP36NF06L
• Description: MOSFET N-CH 60V 30A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP36NF06L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 5V
• Input Capacitance (ciss) @ Vds: 660pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.04 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 18 V
• Continuous Drain Current: 30 A
• Power Dissipation: 70000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 30A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 40mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7522-5; STP36NF06L

Test circuit
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Figure 12. Unclamped inductive load test
Figure 14. Switching times test circuit for
Figure 16. Test circuit for inductive load
circuit
resistive load
Test circuit
switching and diode recovery times
Figure 13. Unclamped inductive wafeform
Figure 15. Gate charge test circuit
Figure 17. Switching time waveform
STP36NF06L - STB36NF06L