STP9NK65ZFP STMicroelectronics, STP9NK65ZFP Datasheet - Page 6

• Manufacturer Part Number: STP9NK65ZFP
• Description: MOSFET N-CH 650V 6.4A TO-220FP
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP9NK65ZFP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 3.2A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 6.4A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 1145pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6.4 A
• Power Dissipation: 30 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
2.1
6/15
Figure 2.
Figure 4.
Figure 6.
Safe operating area for TO-220
Safe operating area for TO-220FP
Output characteristics
Electrical characteristics (curves)
Figure 3.
Figure 5.
Figure 7.
Thermal impedance for TO-220
Thermal impedance for TO-220FP
Transfer characteristics
STP9NK65Z - STP9NK65ZFP