STP55NF06L STMicroelectronics, STP55NF06L Datasheet - Page 7

• Manufacturer Part Number: STP55NF06L
• Description: MOSFET N-CH 60V 55A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP55NF06L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 27.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 1.7V @ 250µA
• Gate Charge (qg) @ Vgs: 37nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1700pF @ 25V
• Power - Max: 95W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 30 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 55 A
• Power Dissipation: 95000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6742-5; STP55NF06L

STB55NF06L - STB55NF06L-1 - STP55NF06L
Figure 7.
Figure 9.
Figure 11. Source-drain diode forward
Gate charge vs gate-source voltage Figure 8.
Normalized gate threshold voltage
vs temperature
characteristics
Figure 10. Normalized on resistance vs
Capacitance variations
temperature
Electrical characteristics
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