IXFA12N50P IXYS, IXFA12N50P Datasheet

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IXFA12N50P

Manufacturer Part Number
IXFA12N50P
Description
MOSFET N-CH 500V 12A D2-PAK
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFA12N50P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
5.5V @ 1mA
Gate Charge (qg) @ Vgs
29nC @ 10V
Input Capacitance (ciss) @ Vds
1830pF @ 25V
Power - Max
200W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
12
Rds(on), Max, Tj=25°c, (?)
0.5
Ciss, Typ, (pf)
1830
Qg, Typ, (nc)
29
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
200
Rthjc, Max, (ºc/w)
0.62
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFA12N50P
Manufacturer:
IXYS
Quantity:
18 000
Polar
HiperFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062) from case for 10s
Plastic body for 10s
Mounting torque
TO-263
TO-220
V
V
V
V
V
V
Test Conditions
S
Power MOSFET
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
= 0V, I
= V
= ±30V, V
= V
= 0V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
D
D
= 250μA
≤ V
= 1mA
= 0.5 • I
DS
DSS
= 0V
, T
(TO-220)
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXFA12N50P
IXFP12N50P
-55 ... +150
-55 ... +150
Maximum Ratings
1.13 / 10
500
3.0
Min.
Characteristic Values
500
500
±30
±40
600
200
150
300
260
2.5
3.0
12
30
12
20
Typ.
±100 nA
500 mΩ
Nm/lb.in.
250
5.5
Max.
5
V/ns
mJ
μA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
V
I
R
TO-263 (IXFA)
TO-220 (IXFP)
G = Gate
S = Source
Features
Advantages
D25
International standard packages
Unclamped Inductive Switching
(UIS) rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
DS(on)
DSS
G
D
G
S
= 500V
= 12A
≤ ≤ ≤ ≤ ≤
S
D
TAB = Drain
500mΩ Ω Ω Ω Ω
= Drain
(TAB)
DS99436F(04/08)
(TAB)

Related parts for IXFA12N50P

IXFA12N50P Summary of contents

Page 1

... ±30V GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2008 IXYS CORPORATION, All rights reserved IXFA12N50P IXFP12N50P Maximum Ratings 500 = 1MΩ 500 GS ±30 ± 600 ≤ 150° 200 -55 ... +150 150 -55 ... +150 300 260 1. 2.5 3.0 Characteristic Values Min. 500 3 ...

Page 2

... B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 TO-220 (IXFP) Outline Max Pins Gate nC 0.62 °C/W °C/W Max 1.5 V 300 ns TO-263 (IXFA) Outline μC A 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXFA12N50P IXFP12N50P 2 - Drain 7,157,338B2 ...

Page 3

... Fig. 2. Extended Output Characteristics º 10V Volts D S Fig Normalized DS(on vs. Junction Temperature 2.6 2 2.2 2.0 1.8 1 12A D 1.4 1.2 1.0 0.8 0.6 0.4 -50 - Degrees Centigrade J Fig. 6. Drain Curre Case Te mpe rature -50 - Degrees Centigrade C IXFA12N50P IXFP12N50P Value 100 125 150 100 125 150 ...

Page 4

... C iss C oss C rss Volts Fig. 8. Transconductance º º 125 º Amperes D Fig. 10. Gate Charge 250V 10m nanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area 100 R Limit DS(on 100 V - Volts D S IXFA12N50P IXFP12N50P 150º 25ºC C 25µs 100µ 10ms 1000 ...

Page 5

... IXYS CORPORATION, All rights reserved Fig. 13. Maximum Transient Thermal Impedance 1 Pulse Width - milliseconds IXFA12N50P IXFP12N50P 10 100 IXYS REF: T_12N50P(4J)4-14-08-D 1000 ...

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