IRF3415STRRPBF International Rectifier, IRF3415STRRPBF Datasheet - Page 8

• Manufacturer Part Number: IRF3415STRRPBF
• Description: MOSFET N-CH 150V 43A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3415STRRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 42 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 43A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 42 m Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 43 A
• Power Dissipation: 3.8 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 69 ns
• Gate Charge Qg: 133.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 55 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Dimensions are shown in millimeters (inches)
2
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