IXTQ182N055T IXYS, IXTQ182N055T Datasheet

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IXTQ182N055T

Manufacturer Part Number
IXTQ182N055T
Description
MOSFET N-CH 55V 182A TO-3P
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTQ182N055T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
182A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
114nC @ 10V
Input Capacitance (ciss) @ Vds
4850pF @ 25V
Power - Max
360W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.005 Ohms
Drain-source Breakdown Voltage
55 V
Continuous Drain Current
182 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
55
Id(cont), Tc=25°c, (a)
182
Rds(on), Max, Tj=25°c, (?)
0.0050
Ciss, Typ, (pf)
4850
Qg, Typ, (nc)
114
Trr, Typ, (ns)
70
Trr, Max, (ns)
-
Pd, (w)
360
Rthjc, Max, (k/w)
0.42
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TrenchMV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS CORPORATION All rights reserved
D25
LRMS
DM
AR
GSS
DSS
L
SOLD
DGR
D
J
JM
stg
GS(th)
DSS
GSM
AS
DS(on)
d
J
DSS
= 25° C unless otherwise specified)
Test Conditions
T
T
Transient
T
Lead Current Limit, RMS
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque
TO-3P
TO-247
Test Conditions
V
V
V
V
V
V
S
C
C
C
C
C
GS
J
J
J
DS
GS
DS
GS
GS
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
≤ I
≤ 175° C, R
= 25° C
= 0 V, I
= V
= ± 20 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
TM
DSS
, I
D
D
= 250 µA
D
= 250 µA
G
=25 A, Notes 1, 2
DS
= 5 Ω
= 0 V
Preliminary Technical Information
GS
= 1 MΩ
DD
T
J
≤ V
= 150° C
DSS
IXTH182N055T
IXTQ182N055T
JM
Min.
2.0
55
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
1.13 / 10 Nm/lb.in.
Typ.
3.5
± 20
182
490
360
300
260
175
1.0
5.5
55
55
75
25
± 200
3
6
250
Max.
4.0
5.0
5
V/ns
m Ω
nA
µA
µA
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
V
A
g
g
V
J
Features
Advantages
Applications
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
TO-247 (IXTH)
TO-3P (IXTQ)
Easy to mount
Space savings
High power density
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
Primary- Side Switch
DC/DC Converters and Off-line UPS
V
I
R
High Current Switching
G = Gate
S = Source
D25
G
Applications
DSS
DS(on)
D
G
S
D
S
=
= 182
≤ ≤ ≤ ≤ ≤
D = Drain
TAB = Drain
5.0 m Ω Ω Ω Ω Ω
55
DS99682 (11/06)
(TAB)
(TAB)
A
V

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IXTQ182N055T Summary of contents

Page 1

... D = ± GSS DSS DS DSS =25 A, Notes 1, 2 DS(on © 2006 IXYS CORPORATION All rights reserved Preliminary Technical Information IXTH182N055T IXTQ182N055T Maximum Ratings MΩ ± 20 182 75 490 JM 25 1.0 ≤ DSS 360 -55 ... +175 175 -55 ... +175 300 260 1. Nm/lb.in. 5.5 6 Characteristic Values Min. ...

Page 2

... DSS 114 = 0.25 Characteristic Values Min. Typ Kelvin test contact DS(on) 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH182N055T IXTQ182N055T TO-247AD Outline Max Terminals Gate 3 - Source nC Dim. Millimeter nC Min. Max. A 4.7 5 2.2 2. 2.2 2.6 0.42 °C/W ...

Page 3

... Value D 140 120 T = 175ºC J 100 T = 25ºC J 200 240 280 320 IXTH182N055T IXTQ182N055T Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V 182A D ...

Page 4

... Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 140 120 T = -40ºC J 100 25ºC 125ºC 6 6 25ºC J 0.9 1 1.1 1.2 1.3 1,000 100 IXTH182N055T IXTQ182N055T Fig. 8. Transconductance 40º 120 150 I - Amperes D Fig. 10. Gate Charge 27. 25A 10mA ...

Page 5

... I = 50A 25A 180 d(off Ω 10V 160 30V DS 140 66 120 62 100 IXTH182N055T IXTQ182N055T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Ω 10V 30V Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature d(off Ω 10V 30V 25A D 42 ...

Page 6

... IXYS reserves the right to change limits, test conditions, and dimensions. Fig. 19. Maximum Transient Thermal Impedance 0.01 Pulse Width - Second IXTH182N055T IXTQ182N055T 0.1 1 IXYS REF: T_182N055T (4V) 6-01-06-A.xls ...

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