STF10N65K3 STMicroelectronics, STF10N65K3 Datasheet - Page 3

• Manufacturer Part Number: STF10N65K3
• Description: MOSFET N-CH 650V 10A TO-220FP
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STF10N65K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 1180pF @ 50V
• Power - Max: 35W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STF10N65K3
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area
2. Starting T
3. I
Table 3.
V
Symbol
Symbol
R
dv/dt
Rt
ESD(G-S)
I
P
DM
thj-case
V
V
V
E
T
I
SD
hj-amb
I
I
TOT
AR
T
T
ISO
DS
GS
stg
AS
D
D
j
l
(1)
(3)
≤ 10 A, di/dt = 100 A/µs, V
Drain source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Max current during repetitive or single pulse
avalanche (pulse width limited by T
Single pulse avalanche energy
Derating factor
Peak diode recovery voltage slope
G-S ESD (HBM C=100 pF, R=1.5 kΩ)
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s;T
Operating junction temperature
Storage temperature
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
j
= 25 °C, I
Absolute maximum ratings
Thermal data
D
= I
AR
, V
DD
Parameter
Parameter
Peak
C
= 50 V
Doc ID 15732 Rev 1
= 25 °C
GS
< V
=0)
(BR)DSS
C
C
(2)
= 25 °C
= 100 °C
C
JMAX
=25 °C)
)
-55 to 150
Value
Value
2500
2500
± 30
0.28
3.57
62.5
650
212
7.2
300
6.3
10
40
35
12
Electrical ratings
W/°C
°C/W
°C/W
V/ns
Unit
Unit
mJ
°C
°C
W
V
V
A
A
A
A
V
V
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