STF10N65K3 STMicroelectronics, STF10N65K3 Datasheet - Page 4

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STF10N65K3

Manufacturer Part Number
STF10N65K3
Description
MOSFET N-CH 650V 10A TO-220FP
Manufacturer
STMicroelectronics
Series
SuperMESH3™r
Datasheet

Specifications of STF10N65K3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1 Ohm @ 3.6A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
42nC @ 10V
Input Capacitance (ciss) @ Vds
1180pF @ 50V
Power - Max
35W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Electrical characteristics
2
4/13
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4.
Table 5.
Table 6.
Symbol
V
Symbol
Symbol
C
R
V
t
t
(BR)DSS
d(on)
d(off)
C
I
I
C
oss eq.
DS(on)
C
Q
GS(th)
Q
GSS
R
DSS
Q
t
t
oss
r
f
iss
rss
gs
gd
G
g
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Intrinsic gate resistnce f=1 MHz open drain
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Switching times
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 15732 Rev 1
V
V
V
V
V
(see
I
V
V
V
V
D
DS
GS
DS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
= Max rating
= Max rating, T
= 50 V, f = 1 MHz,
= 0
= 0 to 520 V, V
= 10 V
= ± 20 V
= V
= 10 V, I
= 520 V, I
Figure
V
R
(see
Test conditions
Test conditions
GS
DD
G
= 4.7 Ω, V
, I
= 310 V, I
Figure
16)
GS
D
Test conditions
D
D
= 100 µA
= 3.6 A
= 0
= 7.2 A,
15)
GS
C
D
GS
=125 °C
= 0
= 3.5 A,
= 10 V
Min.
Min.
650
3
-
-
-
-
Min.
-
1180
Typ.
Typ.
125
7.4
14
77
42
23
3
Typ.
14.5
14
44
35
STF10N65K3
Max.
Max.
4.5
50
10
Max Unit
1
1
-
-
-
-
-
Unit
Unit
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
ns
ns
ns
ns
V
V

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