STF10N65K3 STMicroelectronics, STF10N65K3 Datasheet - Page 6

• Manufacturer Part Number: STF10N65K3
• Description: MOSFET N-CH 650V 10A TO-220FP
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STF10N65K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 1180pF @ 50V
• Power - Max: 35W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
2.1
6/13
Figure 2.
Figure 4.
Figure 6.
100
0.1
(norm)
(A)
BV
10
I
D
1
1.10
1.00
0.95
1.05
0.90
0.1
(A)
18
DSS
16
14
12
10
I
D
2
8
6
4
0
-75
0
Electrical characteristics (curves)
Safe operating area
Output characteristics
Normalized BV
-50
-25
1
V
GS
0
10
=10V
25 50
10
Tj=150°C
Tc=25°C
Sinlge
pulse
DSS
75
20
100
vs temperature
100
125 150
V
DS
(V)
Doc ID 15732 Rev 1
100µs
10µs
1ms
10ms
V
AM03922v1
AM03925v1
AM03923v1
T
DS
7V
5V
J
6V
(°C)
(V)
Figure 3.
Figure 5.
Figure 7.
R
DS(on)
0.90
0.85
0.95
0.80
0.70
0.65
0.75
0.60
(A)
(Ω)
I
12
11
10
D
0
4
2
1
9
8
7
6
5
3
1
0
Thermal impedance
Transfer characteristics
Static drain-source on resistance
2
1
3
2
4
3
5
4
6
5
7
6
8
7
STF10N65K3
9
I
D
(A)
AM03924v1
AM03926v1
V
GS
(V)