STF10N62K3 STMicroelectronics, STF10N62K3 Datasheet - Page 7

• Manufacturer Part Number: STF10N62K3
• Description: MOSFET N-CH 620V 8.4A TO-220FP
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STF10N62K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 8.4A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 1250pF @ 50V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STF10N62K3, STI10N62K3, STP10N62K3
Figure 8.
Figure 10. Output capacitance stored energy
Figure 12. Gate charge vs gate-source voltage Figure 13. Normalized on resistance vs
(norm)
BV
E
1.05
1.00
0.95
1.10
0.90
V
(V)
(µJ)
DSS
coss
12
10
GS
2
8
6
4
0
0
4
3
7
6
5
1
2
0
0
V
Normalized BV
DS
-50
100
-25
10
200 300
0
V
20
DD
25 50
I
D
=496V
=8A
DSS
400
30
75
vs temperature
100
500 600
40
125 150
V
GS
Q
Doc ID 15640 Rev 2
g
(nC)
AM03913v1
AM03917v1
V
AM03915v1
T
500
400
DS
300
100
0
200
J
(°C)
(V)
Figure 9.
Figure 11. Capacitance variations
R
(norm)
R
0.076
0.066
0.078
0.068
1000
0.074
0.072
0.070
DS(on)
DS(on)
100
(pF)
(Ω)
1.0
0.0
0.5
10
1.5
2.0
C
0.1
0
Static drain-source on resistance
temperature
-50
1
V
GS
-25
=10V
2
1
0
3
25 50
Electrical characteristics
4
10
5
75
6
100 125 150
100
7
8
V
DS
AM03919v1
AM03914v1
AM03916v1
I
(V)
T
D
Ciss
Crss
J
(A)
Coss
(°C)
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