IXFA10N80P IXYS, IXFA10N80P Datasheet

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IXFA10N80P

Manufacturer Part Number
IXFA10N80P
Description
MOSFET N-CH 800V 10A TO-263
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFA10N80P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.1 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
5.5V @ 2.5mA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
2050pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.1 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
10 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
10
Rds(on), Max, Tj=25°c, (?)
1.1
Ciss, Typ, (pf)
2050
Qg, Typ, (nc)
40
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
300
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFA10N80P
Manufacturer:
IXYS
Quantity:
18 000
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
TO-263 AA (IXFA)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062) from Case for 10s
Plastic Body for 10s
Mounting Torque
TO-263
TO-220
TO-3P
TO-247
V
V
V
V
V
Test Conditions
S
TM
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ± 30V, V
= V
= 10V, I
HiPerFET
G
DM
S
GS
, V
DSS
, I
DD
D (TAB)
D
, V
D
D
= 250μA
≤ V
= 2.5mA
= 0.5 • I
GS
DS
= 0V
DSS
= 0V
, T
(TO-220,TO-247)
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 150°C
IXFA10N80P
IXFP10N80P
IXFQ10N80P
IXFH10N80P
TO-220AB (IXFP)
JM
G
D S
800
3.0
Characteristic Values
Min.
-55 ... +150
-55 ... +150
Maximum Ratings
1.13 / 10
D (TAB)
Typ.
800
800
±30
±40
600
300
150
300
260
2.5
5.5
6.0
3.0
10
30
10
5
Max.
±100
Nm/lb.in.
500
5.5
1.1
25
V/ns
mJ
μA
μA
nA
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
g
g
g
V
I
R
t
TO-3P (IXFQ)
TO-247 (IXFH)
G = Gate
S = Source
Features
Advantages
Applications
D25
rr
International Standard Packages
Avalanche Rated
Low Package Inductance
Easy to Drive and to Protect
Switched-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
G
G
D
S
D
= 800V
= 10A
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
S
D
TAB = Drain
1.1Ω Ω Ω Ω Ω
250ns
= Drain
D (TAB)
D (TAB)
DS99432F(08/09)

Related parts for IXFA10N80P

IXFA10N80P Summary of contents

Page 1

... ± 30V GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2009 IXYS CORPORATION, All Rights Reserved IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P TO-220AB (IXFP (TAB Maximum Ratings 800 = 1MΩ 800 GS ±30 ± 600 ≤ 150° 300 -55 ... +150 150 -55 ... +150 300 260 1 ...

Page 2

... DSS D D25 14 0.50 0.25 Characteristic Values Min. Typ. JM 200 3.0 0 100 V - Volts DS 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P Max 0.42 °C/W °C/W °C/W Max 1.5 V 250 ns A μC 25µs 1 00µs ...

Page 3

... I - Amperes D © 2009 IXYS CORPORATION, All Rights Reserved º º 10V 125 º º IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P Fig. 3. Extended Output Characteristics º 10V Volts D S Fig Normalized to 0.5 I DS(on ) vs. Junction Temperature 3.2 2 10V GS 2.4 2 10A D 1.6 1.2 0.8 ...

Page 4

... Fig. 12. Capacitance 10000 f = 1MHz 1000 100 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 5.5 6.0 6.5 º 0.8 0.9 1.0 1.1 C iss C oss C rss Volts IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P Fig. 9. Transconductance º º º 125 Amperes D Fig. 11. Gate Charge 10 V ...

Page 5

... Q 5.89 6.40 0.232 0.252 2 - Drain R 4.32 5.49 .170 4 - Drain S 6.15 BSC 242 BSC IXFA10N80P IXFH10N80P IXFP10N80P IXFQ10N80P TO-3P (IXFQ) Outline Pins Gate 3 - Source Max. .209 .102 .098 .055 .084 .123 .031 .845 .640 .800 .177 .144 ...

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