IRFZ48NPBF International Rectifier, IRFZ48NPBF Datasheet

IRFZ48NPBF

Manufacturer Part Number

IRFZ48NPBF

Description

MOSFET N-CH 55V 64A TO-220AB

Manufacturer

International Rectifier

Series

HEXFET®r

Type

Power MOSFETr

Datasheets

1.IRFZ48NPBF.pdf (8 pages)

2.IRFZ48NPBF.pdf (3 pages)

Specifications of IRFZ48NPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

14 mOhm @ 32A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

64A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

81nC @ 10V

Input Capacitance (ciss) @ Vds

1970pF @ 25V

Power - Max

130W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.014Ohm

Drain-source On-volt

55V

Gate-source Voltage (max)

±20V

Drain Current (max)

64A

Power Dissipation

130W

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 175C

Operating Temperature Classification

Military

Mounting

Through Hole

Pin Count

3 +Tab

Package Type

TO-220AB

Current, Drain

64 A

Gate Charge, Total

81 nC

Polarization

N-Channel

Resistance, Drain To Source On

14 Milliohms

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

34 ns

Time, Turn-on Delay

12 ns

Transconductance, Forward

24 S

Voltage, Breakdown, Drain To Source

55 V

Voltage, Forward, Diode

1.3 V

Voltage, Gate To Source

±20 V

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

64 A

Mounting Style

Through Hole

Gate Charge Qg

54 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRFZ48NPBF

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFZ48NPBF

Manufacturer:

INTERNATIONAL RECTIFIER

Quantity:

30 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFZ48NPBF

Manufacturer:

Quantity:

4 820

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRFZ48NPBF

Manufacturer:

Quantity:

20 000

Company:

H&T Electronics

Part Number:

IRFZ48NPBF

Quantity:

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Company:

H&T Electronics

Part Number:

IRFZ48NPBF

Quantity:

25 780

Current page: 1 of 8
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Description

Absolute Maximum Ratings

Thermal Resistance

Advanced HEXFET

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts.

resistance and low package cost of the TO-220 contribute

to its wide acceptance throughout the industry.

www.irf.com

dv/dt

STG

θJC

θCS

θJA

@ T

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Lead-Free

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Power MOSFETs from International

Parameter

The low thermal

@ 10V

Typ.

300 (1.6mm from case )

0.50

–––

10 lbf•in (1.1N•m)

HEXFET

IRFZ48NPbF

-55 to + 175

TO-220AB

Max.

0.83

210

130

± 20

5.0

Power MOSFET

DS(on)

Max.

1.15

–––

DSS

= 64A

PD - 94991B

= 55V

= 14mΩ

Units

W/°C

°C/W

V/ns

°C

Related parts for IRFZ48NPBF

IRFZ48NPBF Summary of contents

Page 1

... R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com G The low thermal @ 10V GS @ 10V GS ƒ 300 (1.6mm from case ) Typ. 0. 94991B IRFZ48NPbF ® HEXFET Power MOSFET 55V DSS R = 14mΩ DS(on 64A D S TO-220AB Max. Units 210 130 W 0 ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

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IRFZ48NPBF International Rectifier, IRFZ48NPBF Datasheet

IRFZ48NPBF

Specifications of IRFZ48NPBF

Available stocks

Related parts for IRFZ48NPBF

IRFZ48NPBF Summary of contents

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