STF11NM60ND STMicroelectronics, STF11NM60ND Datasheet

MOSFET N-CH 600V 10A TO-220FP

STF11NM60ND

Manufacturer Part Number
STF11NM60ND
Description
MOSFET N-CH 600V 10A TO-220FP
Manufacturer
STMicroelectronics
Series
FDmesh™r
Datasheet

Specifications of STF11NM60ND

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
450 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
850pF @ 50V
Power - Max
25W
Mounting Type
Through Hole
Package / Case
TO-220FP
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.45 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
10 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STF11NM60ND
Manufacturer:
MITSUBISHI
Quantity:
5 000
Part Number:
STF11NM60ND
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STF11NM60ND
Quantity:
8 000
Part Number:
STF11NM60ND,STF11NM60N,11NM60ND,
Manufacturer:
ST
0
Part Number:
STF11NM60ND,STP11NM60N,STP11NM60FP,P11NM60
Manufacturer:
ST
0
Features
1. Limited only by maximum temperature allowed
Application
Switching applications
Description
The device is an N-channel FDmesh™ II Power
MOSFET that belongs to the second generation
of MDmesh™ technology. This revolutionary
Power MOSFET associates a new vertical
structure to the company's strip layout and
associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
Table 1.
October 2010
STD11NM60ND
STU11NM60ND
STF11NM60ND
STP11NM60ND
STI11NM60ND
Order codes
The worldwide best R
fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche
capabilities
STD11NM60ND
STP11NM60ND
STU11NM60ND
STF11NM60ND
STI11NM60ND
Order codes
N-channel 600 V, 0.37 Ω , 10 A, FDmesh™ II Power MOSFET
Device summary
V
DSS
650 V
(@T
DS(on)
jmax
) R
* area amongst the
DS(on)
< 0.45 Ω
11NM60ND
Marking
STD11NM60ND, STF/I11NM60ND
max
STP11NM60ND, STU11NM60ND
10 A
Doc ID 14625 Rev 2
I
10 A
10 A
10 A
10 A
2
I
D
PAK, TO-220, TO-220FP, IPAK, DPAK
(1)
Figure 1.
DPAK
TO-220FP
TO-220
Package
TO-220
DPAK
I
IPAK
2
PAK
1
3
Internal schematic diagram
1
2
3
IPAK
1
2
3
Tape and reel
Packaging
Tube
Tube
Tube
Tube
TO-220FP
I²PAK
www.st.com
1 2
1
2
3
3
1/19
19

Related parts for STF11NM60ND

STF11NM60ND Summary of contents

Page 1

... ZVS phase-shift converters. Table 1. Device summary Order codes STD11NM60ND STF11NM60ND STI11NM60ND STP11NM60ND STU11NM60ND October 2010 STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND 2 I PAK, TO-220, TO-220FP, IPAK, DPAK ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STD/F/I/P/U11NM60ND 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (2) Drain current (pulsed ...

Page 4

Electrical ratings Table 4. Avalanche characteristics Symbol I Avalanche current, repetitive or not-repetitive AS E Single pulse avalanche energy AS 1. Pulse width limited by Tj max 2. starting Tj= 25 °C, I 4/19 Parameter ( ...

Page 5

STD/F/I/P/U11NM60ND 2 Electrical characteristics ( °C unless otherwise specified) CASE Table 5. On/off states Symbol Drain-source breakdown V (BR)DSS voltage (1) dv/dt Drain-source voltage slope Zero gate voltage drain I DSS current (V Gate body leakage current I ...

Page 6

Electrical characteristics Table 7. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) ...

Page 7

STD/F/I/P/U11NM60ND 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, I²PAK Figure 4. Safe operating area for TO-220FP Tj=150°C Tc=25°C 0.1 Single pulse 0.01 10 0.1 1 Figure 6. Safe operating area for ...

Page 8

Electrical characteristics Figure 8. Output characteristics Figure 10. Transconductance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 8/19 Figure 9. Transfer characteristics Figure 11. Static drain-source on resistance Doc ID 14625 Rev 2 STD/F/I/P/U11NM60ND ...

Page 9

STD/F/I/P/U11NM60ND Figure 14. Normalized gate threshold voltage vs temperature Figure 16. Source-drain diode forward characteristics Figure 15. Normalized on resistance vs temperature Figure 17. Normalized B Doc ID 14625 Rev 2 Electrical characteristics vs temperature VDSS 9/19 ...

Page 10

Test circuits 3 Test circuits Figure 18. Switching times test circuit for resistive load D.U. Figure 20. Test circuit for inductive load switching and diode recovery times ...

Page 11

STD/F/I/P/U11NM60ND 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ...

Page 12

Package mechanical data Table 9. TO-220FP mechanical data Dim Dia Figure 24. TO-220FP drawing A 12/19 Min. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 ...

Page 13

STD/F/I/P/U11NM60ND Dim TO-220 type A mechanical data Min A 4.40 b 0.61 b1 1.14 c 0.48 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 ∅P 3.75 Q ...

Page 14

Package mechanical data Dim 14/19 I²PAK (TO-262) mechanical data mm Min Typ Max 4.40 4.60 2.40 2.72 0.61 0.88 1.14 1.70 0.49 0.70 1.23 1.32 8.95 9.35 ...

Page 15

STD/F/I/P/U11NM60ND DIM TO-252 (DPAK) mechanical data mm. min. typ 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.40 4.70 ...

Page 16

Package mechanical data DIM (L1 16/19 TO-251 (IPAK) mechanical data mm. min. typ 2.20 0.90 0.64 5.20 0.45 0.48 6.00 6.40 2.28 4.40 16.10 9.00 ...

Page 17

STD/F/I/P/U11NM60ND 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 6 1.5 D1 1.5 E 1.65 F 7.4 K0 2.55 P0 3.9 P1 7.9 P2 1.9 ...

Page 18

Revision history 6 Revision history Table 10. Document revision history Date 23-Apr-2008 25-Oct-2010 18/19 Revision 1 First release – Corrected Figure 2: Safe operating area for TO-220, I²PAK 2 – Corrected Figure 4: Safe operating area for TO-220FP – Corrected ...

Page 19

... STD/F/I/P/U11NM60ND Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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