IRL1404ZSPBF

Manufacturer Part NumberIRL1404ZSPBF
DescriptionMOSFET N-CH 40V 75A D2PAK
ManufacturerInternational Rectifier
SeriesHEXFET®
IRL1404ZSPBF datasheet
 

Specifications of IRL1404ZSPBF

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs3.1 mOhm @ 75A, 10VDrain To Source Voltage (vdss)40V
Current - Continuous Drain (id) @ 25° C75AVgs(th) (max) @ Id2.7V @ 250µA
Gate Charge (qg) @ Vgs110nC @ 5VInput Capacitance (ciss) @ Vds5080pF @ 25V
Power - Max200WMounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)Transistor PolarityN-Channel
Resistance Drain-source Rds (on)5 mOhmsDrain-source Breakdown Voltage40 V
Gate-source Breakdown Voltage16 VContinuous Drain Current200 A
Power Dissipation230 WMounting StyleSMD/SMT
Gate Charge Qg75 nCLead Free Status / RoHS StatusLead free / RoHS Compliant
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Features
Logic Level
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free
l
Description
®
This HEXFET
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
Absolute Maximum Ratings
I
@ T
= 25°C Continuous Drain Current, V
D
C
I
@ T
= 100°C Continuous Drain Current, V
D
C
I
@ T
= 25°C Continuous Drain Current, V
D
C
I
Pulsed Drain Current
DM
P
@T
= 25°C Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy
AS (Thermally limited)
E
(Tested )
Single Pulse Avalanche Energy Tested Value
AS
Ã
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R
Junction-to-Case
JC
R
Case-to-Sink, Flat, Greased Surface
CS
R
Junction-to-Ambient
JA
R
Junction-to-Ambient (PCB Mount)
JA
www.irf.com
G
TO-220AB
IRL1404ZPbF
Parameter
@ 10V
(Silicon Limited)
GS
@ 10V
GS
@ 10V
(Package Limited)
GS
d
h
g
Parameter
i
i
PD - 95446A
IRL1404ZPbF
IRL1404ZSPbF
IRL1404ZLPbF
®
HEXFET
Power MOSFET
D
V
= 40V
DSS
R
= 3.1m
DS(on)
I
= 75A
D
S
2
D
Pak
TO-262
IRL1404ZSPbF
IRL1404ZLPbF
Max.
Units
200
140
A
75
790
230
W
1.5
W/°C
± 16
V
220
mJ
490
See Fig.12a, 12b, 15, 16
A
mJ
-55 to + 175
°C
300 (1.6mm from case )
y
y
10 lbf
in (1.1N
m)
Typ.
Max.
Units
–––
0.65
°C/W
0.50
–––
–––
62
–––
40
1

IRL1404ZSPBF Summary of contents

  • Page 1

    ... Parameter i i jà 95446A IRL1404ZPbF IRL1404ZSPbF IRL1404ZLPbF ® HEXFET Power MOSFET 40V DSS R = 3.1m DS(on 75A Pak TO-262 IRL1404ZSPbF IRL1404ZLPbF Max. Units 200 140 A 75 790 230 W 1.5 W/°C ± 220 mJ 490 See Fig.12a, 12b 175 °C 300 (1.6mm from case ) lbf in (1 ...

  • Page 2

    Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

  • Page 3

    PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 175°C 100 25° 10V 60µs ...

  • Page 4

    0V MHZ C iss = SHORTED C rss = oss = 10000 C iss C oss 1000 ...

  • Page 5

    Limited By Package 150 100 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ...

  • Page 6

    D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

  • Page 7

    Duty Cycle = Single Pulse 100 0.01 0.05 0. 1.0E-05 1.0E-04 Fig 15. Typical Avalanche Current vs.Pulsewidth 250 TOP Single Pulse BOTTOM 1% Duty Cycle 75A 200 150 100 ...

  • Page 8

    D.U.T + ƒ ‚ -  SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

  • Page 9

    EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 IN THE AS S EMBLY LINE "C" Note: "P" sembly line position indicates "Lead - Free" Notes: 1. For an Automotive Qualified ...

  • Page 10

    T HIS IS AN IRF530S WITH LOT CODE 8024 AS SEMBLED ON WW 02, 2000 ASS EMBLY LINE "L" OR Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For ...

  • Page 11

    TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 SEMBLY LINE "C" OR Notes: 1. For an Automotive ...

  • Page 12

    D Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. ...