IRL1404ZSPBF International Rectifier, IRL1404ZSPBF Datasheet - Page 3

• Manufacturer Part Number: IRL1404ZSPBF
• Description: MOSFET N-CH 40V 75A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL1404ZSPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.1 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2.7V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 5V
• Input Capacitance (ciss) @ Vds: 5080pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 200 A
• Power Dissipation: 230 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 75 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000
1000
100
100
1.0
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
1
0.1
2
3
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
T J = 25°C
4
1
5
3.0V
6
V DS = 10V
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 25°C
T J = 175°C
7
10
TOP
BOTTOM
8
9
VGS
10V
7.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
100
10
1000
200
150
100
100
Fig 4. Typical Forward Transconductance
10
Fig 2. Typical Output Characteristics
50
1
0
0.1
0
V DS , Drain-to-Source Voltage (V)
I D ,Drain-to-Source Current (A)
50
vs. Drain Current
T J = 25°C
1
3.0V
100
60µs PULSE WIDTH
Tj = 175°C
T J = 175°C
10
TOP
BOTTOM
V DS = 10V
150
VGS
10V
7.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
3
200
100