IRL1404ZSPBF International Rectifier, IRL1404ZSPBF Datasheet - Page 5

• Manufacturer Part Number: IRL1404ZSPBF
• Description: MOSFET N-CH 40V 75A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL1404ZSPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.1 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2.7V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 5V
• Input Capacitance (ciss) @ Vds: 5080pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 200 A
• Power Dissipation: 230 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 75 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.0001
200
150
100
0.001
50
0.01
0.1
0
1
Fig 9. Maximum Drain Current vs.
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
0.02
0.20
0.01
0.10
0.05
Case Temperature
T C , Case Temperature (°C)
75
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
100
Limited By Package
125
0.0001
150
t 1 , Rectangular Pulse Duration (sec)
175
0.001
J
J
1
Ci= i Ri
1
Ci
2.0
1.5
1.0
0.5
Fig 10. Normalized On-Resistance
i Ri
R
-60 -40 -20 0
1
R
1
I D = 75A
V GS = 10V
2
R
2
2
T J , Junction Temperature (°C)
R
0.01
vs. Temperature
2
R
3
3
20 40 60 80 100 120 140 160 180
R
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
3
3
C
Ri (°C/W)
0.185
0.241
0.227
0.1
i (sec)
5
1