IXTQ110N055P IXYS, IXTQ110N055P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTQ110N055P
Manufacturer Part Number
IXTQ110N055P
Description
MOSFET N-CH 55V 110A TO-3P
Specifications of IXTQ110N055P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
13.5 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
76nC @ 10V
Input Capacitance (ciss) @ Vds
2210pF @ 25V
Power - Max
390W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0135 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
110 A
Power Dissipation
390 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
55
Id(cont), Tc=25°c, (a)
110
Rds(on), Max, Tj=25°c, (?)
0.0135
Ciss, Typ, (pf)
2210
Qg, Typ, (nc)
76
Trr, Typ, (ns)
80
Pd, (w)
390
Rthjc, Max, (k/w)
0.38
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
IXTQ110N055P
PolarHT
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
D25
DRMS
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
© 2006 IXYS All rights reserved
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Continuous
Tranisent
T
External lead current limit
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-3P
TO-220
TO-263
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 250 µA
= 250µA
, V
G
= 0.5 I
= 10 Ω
DS
= 0
D25
(TO-3P / TO-220)
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
IXTA 110N055P
IXTP 110N055P
IXTQ 110N055P
,
Min.
3.0
55
Characteristic Values
-55 ... +175
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
11
±20
±30
110
250
110
390
175
300
260
1.0
5.5
55
55
75
30
10
4
3
±100
13.5
250
Max.
5.5
25
V/ns
m Ω
mJ
° C
nA
µA
µA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
g
g
J
TO-263 (IXTA)
TO-220 (IXTP)
TO-3P (IXTQ)
Features
l
l
l
Advantages
l
l
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
G
D25
DS(on)
DSS
G = Gate
S = Source
D
G
S
D
G
≤ ≤ ≤ ≤ ≤ 13.5 mΩ Ω Ω Ω Ω
=
= 110
S
S
55
D = Drain
TAB = Drain
DS99182E(10/05)
(TAB)
(TAB)
(TAB)
A
V
Related parts for IXTQ110N055P
IXTQ110N055P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTA 110N055P IXTP 110N055P IXTQ 110N055P Maximum Ratings MΩ ±20 ±30 110 75 250 JM 110 30 1.0 ≤ DSS 390 -55 ... +175 175 -55 ... +150 ...
... A, -di/dt = 100 A/µ TO-263 (IXTA) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. Typ. ...
... V alue ain Curr 10V 2 15V - - - - - 2.4 GS 2.2 2 1.8 º 175 C J 1.6 1.4 1 0.8 0 100 125 150 175 200 225 250 mperes D © 2006 IXYS All rights reserved C 220 200 180 160 8V 140 120 7V 100 1.2 1.4 1 1.8 8V 1.6 7V 1 ...
... Source -To-Drain V oltage 300 250 200 150 100 º 150 º 0.4 0.6 0 olts S D Fig. 11. Capacitance 10000 1000 f = 1MH z 100 olts DS IXYS reserves the right to change limits, test conditions, and dimensions. 50 º -40 C º º 150 1.4 1.6 1 ...
... Fig. 13. M axim um Trans ie nt The tance 1.00 0.10 0.01 0.1 © 2006 IXYS All rights reserved IXTA 110N055P IXTP 110N055P 1 10 Pulse Width - milliseconds IXTQ 110N055P 100 1000 ...
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