IRF1404ZSPBF International Rectifier, IRF1404ZSPBF Datasheet

MOSFET N-CH 40V 75A D2PAK

IRF1404ZSPBF

Manufacturer Part Number
IRF1404ZSPBF
Description
MOSFET N-CH 40V 75A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRF1404ZSPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.7 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
4340pF @ 25V
Power - Max
200W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Current, Drain
200 A
Gate Charge, Total
75 nC
Package Type
D2Pak
Polarization
N-Channel
Power Dissipation
230 W
Resistance, Drain To Source On
2.7 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
30 ns
Time, Turn-on Delay
19 ns
Transconductance, Forward
170 S
Voltage, Breakdown, Drain To Source
40 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±16 V
Transistor Polarity
N Channel
Continuous Drain Current Id
75A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
3.7mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.0037Ohm
Drain-source On-volt
40V
Gate-source Voltage (max)
±20V
Continuous Drain Current
190A
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF1404ZSPBF
Manufacturer:
AMD
Quantity:
4 219
Description
This HEXFET
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in a wide variety of applications.
Features
Absolute Maximum Ratings
I
I
I
I
P
V
E
E
I
E
T
T
Thermal Resistance
R
R
R
R
l
l
l
l
l
l
www.irf.com
D
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
θJC
θCS
θJA
θJA
@ T
@ T
@ T
@T
(Tested )
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
C
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Continuous Drain Current, V
= 25°C Power Dissipation
®
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount)
Power MOSFET utilizes the latest
Ã
Parameter
Parameter
i
GS
GS
GS
g
@ 10V
@ 10V
@ 10V
d
j
i
i
(Silicon Limited)
(Package Limited)
G
h
IRF1404ZPbF
TO-220AB
HEXFET
See Fig.12a, 12b, 15, 16
300 (1.6mm from case )
Typ.
0.50
–––
–––
–––
10 lbf
D
S
IRF1404ZSPbF
-55 to + 175
y
D
Max.
in (1.1N
180
120
710
200
± 20
330
480
2
1.3
75
Pak
IRF1404ZSPbF
IRF1404ZLPbF
®
R
IRF1404ZPbF
Power MOSFET
DS(on)
V
y
m)
0.75
Max.
DSS
I
–––
D
62
40
IRF1404ZLPbF
= 75A
k
PD - 96040B
= 3.7mΩ
= 40V
TO-262
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRF1404ZSPBF Summary of contents

Page 1

... Parameter 96040B IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF ® HEXFET Power MOSFET 40V DSS R = 3.7mΩ DS(on 75A Pak TO-262 IRF1404ZSPbF IRF1404ZLPbF Max. Units 180 120 A 75 710 200 W 1.3 W/°C ± 330 mJ 480 See Fig.12a, 12b 175 °C 300 (1.6mm from case ) lbf in (1 ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 25°C 100 15V 20µs PULSE WIDTH 1 ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 6000 Ciss 4000 2000 Coss Crss ...

Page 5

LIMITED BY PACKAGE 160 120 100 Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ...

Page 6

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Duty Cycle = Single Pulse 1000 0.01 100 0.05 0. 1.0E-08 1.0E-07 1.0E-06 Fig 15. Typical Avalanche Current Vs.Pulsewidth 400 TOP Single Pulse BOTTOM 10% Duty Cycle 75A 300 200 100 ...

Page 8

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. ...

Page 9

EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 2000 IN THE AS SEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead - Free" Notes: 1. For an Automotive Qualified version of this part ...

Page 10

T HIS IS AN IRF 530S WIT H LOT CODE 8024 AS SEMBLED ON WW 02, 2000 ASSE MBLY LINE "L" OR Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1404z.pdf ...

Page 11

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 AS S EMBL 19, 1997 EMBLY LINE "C" OR Notes: 1. ...

Page 12

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Notes:  Repetitive rating; ...

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