IRF1010NPBF International Rectifier, IRF1010NPBF Datasheet

MOSFET N-CH 55V 85A TO-220AB

IRF1010NPBF

Manufacturer Part Number
IRF1010NPBF
Description
MOSFET N-CH 55V 85A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets
1.IRF1010NPBF.pdf (8 pages)
2.IRF1010NPBF.pdf (3 pages)

Specifications of IRF1010NPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 mOhm @ 43A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
85A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
3210pF @ 25V
Power - Max
180W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
85 A
Gate Charge, Total
120 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
180 W
Resistance, Drain To Source On
11 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
39 ns
Time, Turn-on Delay
13 ns
Transconductance, Forward
32 S
Voltage, Breakdown, Drain To Source
55 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
72 A
Mounting Style
Through Hole
Gate Charge Qg
80 nC
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.011Ohm
Drain-source On-volt
55V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF1010NPBF
l
l
l
l
l
l
l
Absolute Maximum Ratings
Thermal Resistance
Advanced HEXFET
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts.
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
www.irf.com
Description
I
I
I
P
V
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AR
θJC
θCS
θJA
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
®
Power MOSFETs from International
Parameter
Parameter

The low thermal

ƒ
GS
GS

@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
0.50
–––
–––
IRF1010NPbF
10 lbf•in (1.1N•m)
HEXFET
-55 to + 175
S
D
TO-220AB
Max.
85
290
180
± 20
1.2
3.6
60
43
18
‡
®
R
Power MOSFET
DS(on)
Max.
V
0.85
–––
I
62
D
DSS
= 85A‡
PD - 94966A
= 55V
= 11mΩ
Units
Units
W/°C
°C/W
V/ns
mJ
°C
W
A
V
A
1

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IRF1010NPBF Summary of contents

Page 1

... R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com G The low thermal @ 10V GS @ 10V GS    ƒ 300 (1.6mm from case ) Typ. 0. 94966A IRF1010NPbF ® HEXFET Power MOSFET 55V DSS R = 11mΩ DS(on 85A‡ TO-220AB Max. Units ‡ 290 ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 10 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 T = ...

Page 4

0V MHZ C iss = rss = C gd 5000 C oss = Ciss 4000 3000 Coss 2000 Crss ...

Page 5

LIMITED BY PACKAGE 100 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 SINGLE PULSE 0.02 (THERMAL ...

Page 6

D.U 20V V GS 0.01 Ω Charge 6 500 15V 400 DRIVER 300 + ...

Page 7

D.U.T + ‚ -  Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 8

EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 ASS EMBLY LINE "C" Note: "P" embly line position indicates "Lead - Free" Notes: 1. For an Automotive ...

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