IXTP2N100 IXYS, IXTP2N100 Datasheet

MOSFET N-CH 1000V 2A TO-220AB

IXTP2N100

Manufacturer Part Number
IXTP2N100
Description
MOSFET N-CH 1000V 2A TO-220AB
Manufacturer
IXYS
Datasheet

Specifications of IXTP2N100

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
825pF @ 25V
Power - Max
100W
Mounting Type
Through Hole
Package / Case
TO-220AB
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2 A
Power Dissipation
100 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
2
Rds(on), Max, Tj=25°c, (?)
7
Ciss, Typ, (pf)
825
Qg, Typ, (nc)
18
Trr, Typ, (ns)
800
Pd, (w)
100
Rthjc, Max, (k/w)
1.25
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTP2N100
Manufacturer:
IXYS
Quantity:
18 000
High Voltage
MOSFET
Symbol
(T
BV
V
I
I
R
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
Weight
© 2009 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062) from Case for 10s
Plastic Body for 10s
Mounting Torque
TO-263
TO-220
Test Conditions
V
V
V
V
V
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±20V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
D
= 250μA
= 250μA
≤ V
GS
= 0.5 • I
DS
= 0V
DSS
= 0V
, T
(TO-220)
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXTA2N100
IXTP2N100
1000
Min.
2.0
- 55 ... +150
- 55 ... +150
Characteristic Values
Maximum Ratings
1.13 / 10
1000
1000
±20
±30
150
100
150
300
260
Typ.
2.5
3.0
2
8
2
5
±100 nA
Nm/lb.in.
Max.
100 μΑ
4.5
25
7
V/ns
mJ
μA
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
g
TO-263 (IXTA)
TO-220 (IXTP)
G = Gate
S = Source
Features
Advantages
Applications
International Standard Packages
Avalanche Rated
Low Package Inductance (< 5nH)
Fast Switching Times
Switched-Mode and Resonant-Mode
Power Supplies
FlyBack Inverters
DC Choppers
V
I
R
Easy to Mount
Space Savings
High Power Density
D25
DS(on)
DSS
G
D
G
S
= 1000V
= 2A
≤ ≤ ≤ ≤ ≤ 7Ω Ω Ω Ω Ω
S
D
TAB = Drain
= Drain
(TAB)
DS97540B(04/09)
(TAB)

Related parts for IXTP2N100

IXTP2N100 Summary of contents

Page 1

... D = ±20V GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2009 IXYS CORPORATION, All Rights Reserved IXTA2N100 IXTP2N100 Maximum Ratings 1000 = 1MΩ 1000 GS ±20 ± 150 ≤ 150° 100 - 55 ... +150 150 - 55 ... +150 300 260 1. 2.5 3.0 Characteristic Values Min. Typ. ...

Page 2

... B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 TO-220 (IXTP) Outline Max Pins Gate 1.25 °C/W °C/W Max 1.5 V TO-263 (IXTA) Outline ns 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXTA2N100 IXTP2N100 2 - Drain 7,157,338B2 ...

Page 3

... T - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 - Degrees Centigrade C IXTA2N100 IXTP2N100 Value 100 125 150 75 100 125 150 ...

Page 4

... Fig. 8. Transconductance 40ºC J 0.0 0.5 1.0 1.5 2 Amperes D Fig. 10. Gate Charge V = 500V 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.0001 0.001 0.01 Pulse Width - Seconds IXTA2N100 IXTP2N100 25ºC 125ºC 2.5 3 IXYS REF: T_2N100(3X-G68)4-16-09 ...

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