IRL1404STRLPBF International Rectifier, IRL1404STRLPBF Datasheet

MOSFET N-CH 40V 160A D2PAK

IRL1404STRLPBF

Manufacturer Part Number
IRL1404STRLPBF
Description
MOSFET N-CH 40V 160A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRL1404LPBF.pdf (11 pages)

Specifications of IRL1404STRLPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4 mOhm @ 95A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
140nC @ 5V
Input Capacitance (ciss) @ Vds
6600pF @ 25V
Power - Max
3.8W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRL1404STRLPBF
IRL1404STRLPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRL1404STRLPBF
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRL1404STRLPBF
Quantity:
800
Description
l
l
l
l
l
l
l
Seventh Generation HEXFET
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area.
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRL1404L) is available for low-
Absolute Maximum Ratings
Thermal Resistance
I
I
I
P
P
V
E
I
E
dv/dt
T
T
R
R
R
www.irf.com
D
D
DM
AR
2
J
STG
D
D
GS
AS
AR
θJC
θCS
θJA
Pak is suitable for high current applications because of
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
@T
@T
2
Pak is a surface mount power package capable of
C
C
A
C
= 25°C
= 100°C
= 25°C
= 25°C
This benefit, combined with the fast
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
®
power MOSFETs from
Parameter
Parameter
(PCB Mounted)
GS
GS
@ 10V
@ 10V
‡
G
Typ.
0.50
300 (1.6mm from case)
–––
–––
HEXFET
-55 to + 175
D
S
160†
110†
Max.
IRL1404S
640
200
± 20
520
3.8
1.3
5.0
95
20
D
IRL1404SPbF
IRL1404LPbF
2
Pak
®
R
Power MOSFET
DS(on)
Max.
I
V
0.75
–––
D
40
DSS
= 160A†
= 0.004Ω
= 40V
PD - 95148
IRL1404L
TO-262
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
W
A
V
A
1
04/19/04

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IRL1404STRLPBF Summary of contents

Page 1

... Description ® Seventh Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRL1404S/LPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.3V 4.3V 100  20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000  ...

Page 4

IRL1404S/LPbF  10000 1MHz iss rss 8000 oss iss 6000 4000  C ...

Page 5

L IMITED BY PACKAGE 120 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 ...

Page 6

IRL1404S/LPbF Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. ...

Page 7

D.U.T + ‚ -  Reverse Polarity of D.U.T for P-Channel Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent *** V Fig 14. For N-channel www.irf.com Peak Diode Recovery ...

Page 8

IRL1404S/LPbF 2 D Pak Package Outline Dimensions are shown in millimeters (inches Pak Part Marking Information (Lead-Free WIT COD ...

Page 9

TO-262 Package Outline TO-262 Part Marking Information E XAMP 3103L L OT CODE 1789 19, 1997 ...

Page 10

IRL1404S/LPbF 2 D Pak Tape & Reel Information Dimensions are shown in millimeters (inches ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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