IRF1405SPBF International Rectifier, IRF1405SPBF Datasheet

MOSFET N-CH 55V 131A D2PAK

IRF1405SPBF

Manufacturer Part Number
IRF1405SPBF
Description
MOSFET N-CH 55V 131A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRF1405SPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.3 mOhm @ 101A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
131A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
260nC @ 10V
Input Capacitance (ciss) @ Vds
5480pF @ 25V
Power - Max
200W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Current, Drain
131 A
Gate Charge, Total
170 nC
Package Type
D2Pak
Polarization
N-Channel
Power Dissipation
200 W
Resistance, Drain To Source On
4.6 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
130 ns
Time, Turn-on Delay
13 ns
Transconductance, Forward
69 S
Voltage, Breakdown, Drain To Source
55 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5.3 m Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
131 A
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
110 ns
Gate Charge Qg
170 nC
Minimum Operating Temperature
- 55 C
Rise Time
190 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF1405SPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF1405SPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF1405SPBF
Quantity:
95
Description
Absolute Maximum Ratings
Thermal Resistance
Stripe Planar design of HEXFET
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These
benefits combine to make this design an extremely
efficient and reliable device for use in a wide variety
of applications.
Benefits
Typical Applications
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
www.irf.com
D
D
DM
AR
J
STG
D
GS
AS
AR
θJC
θJA
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Industrial Motor Drive
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy‡
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Junction-to-Ambient (PCB mount)
Parameter
Parameter
®
Power MOSFETs
GS
GS
@ 10V
@ 10V
ˆ
G
See Fig.12a, 12b, 15, 16
Typ.
300 (1.6mm from case )
IRF1405SPbF
–––
–––
HEXFET
10 lbf•in (1.1N•m)
D
-55 to + 175
2
D
S
Pak
131†
Max.
93†
680
200
± 20
590
1.3
5.0
®
R
IRF1405SPbF
Power MOSFET
IRF1405LPbF
DS(on)
Max.
I
V
0.75
D
IRF1405LPbF
40
DSS
= 131A†
TO-262
= 5.3mΩ
= 55V
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1

Related parts for IRF1405SPBF

IRF1405SPBF Summary of contents

Page 1

... HEXFET Power MOSFET 55V DSS R = 5.3mΩ DS(on 131A† TO-262 2 D Pak IRF1405LPbF IRF1405SPbF Max. Units 131† 93† 680 200 1.3 W/°C ± 20 590 mJ See Fig.12a, 12b, 15 5.0 V/ns - 175 °C 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 4.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° T ...

Page 4

0V MHZ C iss = rss = oss = 10000 Ciss Coss 1000 Crss 100 1 ...

Page 5

LIMITED BY PACKAGE 120 100 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL ...

Page 6

D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig ...

Page 7

Duty Cycle = Single Pulse 100 0.01 0.05 10 0.10 1 0.1 1.0E-07 1.0E-06 Fig 15. Typical Avalanche Current Vs.Pulsewidth 600 TOP Single Pulse BOTTOM 10% Duty Cycle 500 101A 400 300 200 100 0 25 ...

Page 8

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U. Re-Applied Voltage Inductor Curent For N-channel 8 + • • ƒ • - „ - • • • P.W. Period D ...

Page 9

T HIS IS AN IRF 530S WIT H LOT CODE 8024 ASSEMBLED ON WW 02, 2000 ASS EMBLY LINE "L" OR Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. ...

Page 10

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 IN THE AS SEMBLY LINE "C" OR Notes: 1. For an Automotive ...

Page 11

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION ...

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