IRFS4229TRLPBF International Rectifier, IRFS4229TRLPBF Datasheet

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IRFS4229TRLPBF

Manufacturer Part Number
IRFS4229TRLPBF
Description
MOSFET N-CH 30V 45A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFS4229TRLPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
48 mOhm @ 26A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
45A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
4560pF @ 25V
Power - Max
330W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
45A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
42mohm
Rds(on) Test Voltage Vgs
10V
Rohs Compliant
Yes
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
45 A
Power Dissipation
330 W
Mounting Style
SMD/SMT
Gate Charge Qg
72 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFS4229TRLPBF
Manufacturer:
IR
Quantity:
20 000
Features
l
l
l
l
l
l
l
l
Description
* R
www.irf.com
Notes  through … are on page 9
V
I
I
I
I
P
P
T
T
R
R
175°C Operating Junction Temperature for
Absolute Maximum Ratings
Thermal Resistance
Energy Recovery and Pass Switch Applications
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
Reliable Operation
Improved Ruggedness
and Reliability
D
D
DM
RP
Advanced Process Technology
Key Parameters Optimized for PDP Sustain,
Low E
Low Q
High Repetitive Peak Current Capability for
Short Fall & Rise Times for Fast Switching
Repetitive Avalanche Capability for Robustness
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
J
STG
GS
D
D
θJC
θJA
θJC
@ T
@ T
@T
@T
@ T
(end of life) for D
HEXFET
C
C
C
C
C
= 25°C
= 100°C
PULSE
= 25°C
= 100°C
G
= 100°C
for Fast Response
MOSFET
®
Rating to Reduce Power
Power MOSFET
2
Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Junction-to-Case
Junction-to-Ambient
f
Parameter
Parameter
f
g
MOSFET
PULSE
GS
GS
PDP SWITCH
@ 10V
@ 10V
V
V
R
I
T
RP
J
DS
DS (Avalanche)
DS(ON)
G
max
max @ T
min
Gate
G
typ. @ 10V
typ.
C
Typ.
= 100°C
–––
–––
Key Parameters
S
D
10lb
-40 to + 175
IRFS4229PbF
x
in (1.1N
Max.
180
330
190
300
±30
2.2
45
32
91
Drain
D
x
m)
MOSFET
0.45*
Max.
62
250
300
175
42
91
D
D
Source
2
Pak
S
Units
Units
W/°C
G
°C
W
D
V
A
N
m
09/16/08
°C
S
V
V
A
1

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IRFS4229TRLPBF Summary of contents

Page 1

Features Advanced Process Technology l Key Parameters Optimized for PDP Sustain, l Energy Recovery and Pass Switch Applications Low E Rating to Reduce Power l PULSE Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications Low Q for Fast ...

Page 2

Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.5V 6.0V 100 BOTTOM 5.5V 10 5.5V ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T J ...

Page 4

L = 220nH C= 0.3µF 1600 C= 0.2µF C= 0.1µF 1200 800 400 100 Temperature (°C) Fig 7. Typical E vs.Temperature PULSE 7000 0V MHZ C iss = C ...

Page 5

125°C 0. 25°C 0. Gate-to-Source Voltage (V) Fig 13. On-Resistance Vs. Gate Voltage 5.0 4.5 4 250µA 3.5 3.0 2.5 2.0 ...

Page 6

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 18 D.U 20V GS 0.01 Ω Fig 19a. Unclamped Inductive Test Circuit DUT ...

Page 7

A RG DRIVER L B Ipulse RG DUT Fig 21a. t and E Test Circuit st PULSE ≤ 1 ≤ 0.1 % Fig 22a. Switching Time Test Circuit www.irf.com PULSE A C PULSE B VCC Fig 21c. E Test Waveforms ...

Page 8

UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P @Ã'!# 6TT@H7G@ ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ 5 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6TT@H7G` GPUÃ8P @ Q6SUÃIVH7@S DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6U@Ã8P @ QÃ2Ã @TDBI6U@TÃG@6 ÃÃAS@@ ...

Page 9

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Notes:  Repetitive rating; ...

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