IXTP1N100 IXYS, IXTP1N100 Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTP1N100
Manufacturer Part Number
IXTP1N100
Description
MOSFET N-CH 1000V 1.5A TO-220AB
Specifications of IXTP1N100
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 Ohm @ 1A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
1.5A
Vgs(th) (max) @ Id
4.5V @ 25µA
Gate Charge (qg) @ Vgs
14.5nC @ 10V
Input Capacitance (ciss) @ Vds
400pF @ 25V
Power - Max
54W
Mounting Type
Through Hole
Package / Case
TO-220AB
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
11 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
1.5 A
Power Dissipation
54 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
1.5
Rds(on), Max, Tj=25°c, (?)
11
Ciss, Typ, (pf)
480
Qg, Typ, (nc)
23
Trr, Typ, (ns)
710
Pd, (w)
54
Rthjc, Max, (k/w)
2.3
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
High Voltage MOSFET
N-Channel Enhancement Mode
Avalanche Energy Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
V
V
I
I
R
© 2004 IXYS All rights reserved
DM
D25
AR
GSS
DSS
J
JM
stg
DGR
GS
GSM
AR
AS
D
GS(th)
DSS
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
S
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
GS
, di/dt ≤ 100 A/µs, V
DSS
, I
D
D
DC
D
= 250 µA
= 25 µA
, V
= 1.0A
G
= 18 Ω
DS
= 0
GS
= 1 MΩ
T
T
DD
J
J
(T
= 25°C
= 125°C
≤ V
J
= 25°C, unless otherwise specified)
DSS
,
JM
1000
IXTA 1N100
IXTP 1N100
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
typ.
1000
1000
±30
±40
200
150
300
1.5
1.5
54
4
6
6
3
max.
±100
500
4.5
25
11
V/ns
mJ
mJ
°C
°C
°C
°C
nA
µA
µA
W
Ω
A
V
V
V
V
A
A
V
V
g
Features
Applications
Advantages
TO-220AB (IXTP)
G = Gate,
S = Source,
TO-263 AA (IXTA)
International standard packages
High voltage, Low R
process
Rugged polysilicon gate cell structure
Fast switching times
Switch-mode and resonant-mode
power supplies
Flyback inverters
DC choppers
High frequency matching
Space savings
High power density
R
V
I
D25
DSS
DS(on)
G D
S
G
D = Drain,
TAB = Drain
S
= 1000 V
=
=
DS (on)
D (TAB)
1.5 A
11 Ω Ω Ω Ω Ω
98545C(08/04)
HDMOS
D (TAB)
TM
Related parts for IXTP1N100
IXTP1N100 Summary of contents
... GSS DSS DS DSS 1.0A DS(on Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2004 IXYS All rights reserved IXTA 1N100 IXTP 1N100 Maximum Ratings 1000 = 1 MΩ 1000 GS ±30 ±40 1 1.5 6 200 ≤ DSS 54 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. ...
... Pulse test, t ≤ 300 µs, duty cycle d ≤ -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J min ...
Fig. 1. Output Characteris tics º 1 10V GS 0 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Volts D S Fig. ...
... T = 125ºC 1.5 J 1.0 0.5 0.0 0.4 0.5 0.6 0 Volts S D Fig. 11. Capacitance 1000 f = 1MHz 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. 2.5 2.0 1.5 1.0 0.5 0 25º 0.8 0.9 10.0 C iss 1.0 ...
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