IXFH14N60P IXYS, IXFH14N60P Datasheet - Page 4

• Manufacturer Part Number: IXFH14N60P
• Description: MOSFET N-CH 600V 14A TO-247
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFH14N60P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 5.5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.55 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 13 s
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 14 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Fall Time: 26 ns
• Rise Time: 27 ns
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 14
• Rds(on), Max, Tj=25°c, (?): 0.55
• Ciss, Typ, (pf): 2500
• Qg, Typ, (nc): 36
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 300
• Rthjc, Max, (ºc/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
100
50
45
40
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
10
5
0
5
0
1
5.0
0.4
0
5.5
0.5
f
5
Fig. 9. Forward Voltage Drop of
= 1 MHz
6.0
10
Fig. 7. Input Admittance
0.6
Fig. 11. Capacitance
6.5
Intrinsic Diode
T
J
15
V
V
= 125ºC
V
GS
SD
0.7
DS
T
7.0
J
- Volts
- Volts
- Volts
= 125ºC
- 40ºC
20
25ºC
7.5
0.8
25
8.0
C iss
C oss
C rss
T
0.9
J
= 25ºC
30
8.5
1.0
35
9.0
9.5
1.1
40
100
27
24
21
18
15
12
10
10
1
9
6
3
0
9
8
7
6
5
4
3
2
1
0
10
0
0
T
T
T
Single Pulse
Fig. 12. Forward-Bias Safe Operating Area
J
V
I
I
J
C
D
G
= - 40ºC
DS
= 150ºC
5
= 25ºC
4
= 7A
= 10mA
R
125ºC
= 300V
25ºC
DS(on)
10
IXFA14N60P
8
Fig. 8. Transconductance
Limit
15
Fig. 10. Gate Charge
12
Q
G
- NanoCoulombs
I
D
20
- Amperes
16
V
DS
100
25
- Volts
20
DC
30
24
10ms
IXFH14N60P
IXFP14N60P
35
28
1ms
40
32
45
25µs
100µs
36
1000
50