IXTQ50N25T IXYS, IXTQ50N25T Datasheet

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IXTQ50N25T

Manufacturer Part Number
IXTQ50N25T
Description
MOSFET N-CH 250V 50A TO-3P
Manufacturer
IXYS
Datasheet

Specifications of IXTQ50N25T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
60 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
78nC @ 10V
Input Capacitance (ciss) @ Vds
4000pF @ 25V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
TO-3P
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
50
Rds(on), Max, Tj=25°c, (?)
0.050
Ciss, Typ, (pf)
4000
Qg, Typ, (nc)
78
Trr, Typ, (ns)
166
Trr, Max, (ns)
-
Pd, (w)
400
Rthjc, Max, (k/w)
0.31
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTQ50N25T
Quantity:
4 000
Trench Gate
Power MOSFET
N-Channel Enhancement Mode
Symbol
V
V
V
I
I
I
E
P
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
C
DSS
DGR
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
TO-263 AA (IXTA)
Test Conditions
T
T
Transient
T
T
T
T
T
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 s
Mounting Torque (TO-220, TO-3P &TO-247)
Mounting Force (TO-263)
TO-263
TO-220
TO-3P
TO-247
V
V
V
V
V
Test Conditions
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
G
= 0V, I
= V
= ± 20V, V
= V
= 10V, I
S
GS
DSS
D (Tab)
, I
D
, V
D
D
= 1mA
= 1mA
= 0.5 • I
GS
DS
= 0V
= 0V
D25
GS
, Note 1
= 1MΩ
T
J
IXTA50N25T IXTQ50N25T
= 125°C
IXTP50N25T IXTH50N25T
JM
TO-220AB (IXTP)
10..65 / 2.2..14.6
G
D S
250
3.0
Characteristic Values
Min.
-55 ... +150
-55 ... +150
Maximum Ratings
1.13 / 10
D (Tab)
± 30
250
250
130
400
150
300
260
1.5
2.5
3.0
5.5
6.0
50
Typ .
5
± 100 nA
150 μA
Nmlb.in.
Max.
5.0
60 mΩ
1 μA
N/lb.
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
V
V
g
g
g
g
J
V
I
R
TO-3P (IXTQ)
TO-247 (IXTH)
G = Gate
S = Source
Features
Advantages
Applications
D25
Power Supplies
Applications
DC-DC Coverters
Battery Chargers
Uninterrupted Power Supplies
High Speed Power Switching
Fast Intrinsic Rectifier
Avalanche Rated
High Current Handling Capability
High Power Density
Easy to Mount
Space Savings
Switch-Mode and Resonant-Mode
DC Choppers
AC and DC Motor Drives
Low R
DS(on)
DSS
G
G
D
D
DS(on)
S
S
=
=
≤ ≤ ≤ ≤ ≤
D
Tab = Drain
250V
50A
60mΩ Ω Ω Ω Ω
D (Tab)
= Drain
D (Tab)
DS99346B(01/10)

Related parts for IXTQ50N25T

IXTQ50N25T Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on © 2010 IXYS CORPORATION, All Rights Reserved IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T TO-220AB (IXTP (Tab) Maximum Ratings 250 = 1MΩ 250 GS ± 130 JM 5 1.5 400 -55 ... +150 150 -55 ... +150 300 260 1. 10..65 / 2.2..14.6 2 ...

Page 2

... I = 0.5 • DSS D D25 22 0.50 0.25 Characteristic Values Min. Typ . JM 166 23 1.9 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T Max °C/W 0.31 °C/W °C/W Max 200 A 1 μC 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 ...

Page 3

... L1 4.50 .177 ∅P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T TO-220 (IXTP) Outline Pins Gate 2 - Drain 3 - Source TO-3P (IXTQ) Outline Terminals Gate 2 - Drain 3 - Source ...

Page 4

... Value vs 125º 25º 100 120 140 -50 IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T Fig. 2. Extended Output Characteristics @ 10V Volts DS Fig Normalized to I DS(on) D Junction Temperature V = 10V 50A D - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. ...

Page 5

... T = 25º 0.9 1.0 1.1 1.2 1.00 C iss 0.10 C oss C rss 0. 0.00001 IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T Fig. 8. Transconductance 40ºC J 25ºC 125º Amperes D Fig. 10. Gate Charge V = 125V 25A 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.0001 0.001 ...

Page 6

... T = 25º 125º IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current T = 25º 3.3Ω 15V 125V 125º Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature d(off 3.3Ω 15V 125V 25A 50A Degrees Centigrade J Fig ...

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