IRL1404ZPBF International Rectifier, IRL1404ZPBF Datasheet
IRL1404ZPBF
Manufacturer Part Number
IRL1404ZPBF
Description
MOSFET N-CH 40V 75A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRL1404ZPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.1 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2.7V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 5V
Input Capacitance (ciss) @ Vds
5080pF @ 25V
Power - Max
230W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
200 A
Gate Charge, Total
75 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
230 W
Resistance, Drain To Source On
2.5 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
30 ns
Time, Turn-on Delay
19 ns
Transconductance, Forward
120 S
Voltage, Breakdown, Drain To Source
40 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±16 V
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
200 A
Mounting Style
Through Hole
Gate Charge Qg
75 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRL1404ZPBF
Available stocks
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Description
Specifically designed for Automotive applications,
this HEXFET
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
Features
l
l
l
l
l
l
l
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
θJC
θCS
θJA
θJA
@ T
@ T
@ T
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
@T
(Tested )
C
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Continuous Drain Current, V
= 25°C Power Dissipation
®
Power MOSFET utilizes the latest
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount)
Ã
i
Parameter
Parameter
AUTOMOTIVE MOSFET
GS
GS
GS
g
@ 10V
@ 10V
@ 10V
d
jÃ
i
(Silicon Limited)
(Package Limited)
IRL1404ZPbF
h
G
TO-220AB
Gate
G
G
D
S
HEXFET
See Fig.12a, 12b, 15, 16
Typ.
300 (1.6mm from case )
0.50
–––
–––
–––
10 lbf
S
IRL1404ZSPbF
D
IRL1404ZSPbF
-55 to + 175
IRL1404ZLPbF
Drain
D
y
IRL1404ZPbF
Max.
in (1.1N
2
D
± 16
180
130
790
200
190
490
1.3
75
Pak
G
®
R
D
Power MOSFET
DS(on)
S
V
y
m)
0.75
Max.
DSS
I
–––
62
40
D
IRL1404ZLPbF
= 75A
k
= 3.1mΩ
= 40V
Source
PD - 97211
TO-262
S
G
Units
Units
W/°C
°C/W
mJ
mJ
D
°C
W
A
V
A
S
1
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IRL1404ZPBF Summary of contents
Page 1
... Junction-to-Ambient θJA R Junction-to-Ambient (PCB Mount) θJA AUTOMOTIVE MOSFET G G TO-220AB IRL1404ZPbF G Gate Parameter @ 10V (Silicon Limited 10V GS @ 10V (Package Limited Parameter i i jà 97211 IRL1404ZPbF IRL1404ZSPbF IRL1404ZLPbF ® HEXFET Power MOSFET 40V DSS R = 3.1mΩ DS(on 75A Pak TO-262 IRL1404ZSPbF IRL1404ZLPbF ...
Page 2
Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...
Page 3
9 ...