IRL1404ZPBF International Rectifier, IRL1404ZPBF Datasheet - Page 2

MOSFET N-CH 40V 75A TO-220AB

IRL1404ZPBF

Manufacturer Part Number
IRL1404ZPBF
Description
MOSFET N-CH 40V 75A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRL1404ZPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.1 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2.7V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 5V
Input Capacitance (ciss) @ Vds
5080pF @ 25V
Power - Max
230W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
200 A
Gate Charge, Total
75 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
230 W
Resistance, Drain To Source On
2.5 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
30 ns
Time, Turn-on Delay
19 ns
Transconductance, Forward
120 S
Voltage, Breakdown, Drain To Source
40 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±16 V
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
200 A
Mounting Style
Through Hole
Gate Charge Qg
75 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRL1404ZPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRL1404ZPBF
Quantity:
9 000
V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Notes:

ƒ
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
V
D
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
2
Repetitive rating; pulse width limited by
(BR)DSS
L = 0.079mH, R
Part not recommended for use above this value.
Pulse width
C
charging time as C
80% V
max. junction temperature. (See fig. 11).
Limited by T
oss
eff.
eff. is a fixed capacitance that gives the same
/ T
DSS
J
.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Jmax
1.0ms; duty cycle
G
, starting T
= 25 , I
Parameter
oss
while V
AS
Parameter
J
= 75A, V
= 25°C,
DS
is rising from 0 to
2%.
J
GS
= 25°C (unless otherwise specified)
=10V.
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ˆ
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.4
40
Limited by T
repetitive avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is only applied to TO-220AB package.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques
refer to application note #AN-994.
0.034
5080
3310
1280
–––
–––
–––
–––
–––
–––
–––
–––
–––
180
970
570
870
–––
–––
–––
2.5
4.5
7.5
75
28
40
19
30
49
26
18
Jmax
-200
–––
–––
–––
250
200
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
180
720
3.1
4.7
5.9
2.7
1.3
20
39
27
, see Fig.12a, 12b, 15, 16 for typical
V/°C
m
nC
nH
nC
µA
nA
pF
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
= 75A
= 75A
= 25°C, I
= 25°C, I
= 4.0
= 0V, I
= 10V, I
= 5.0V, I
= 4.5V, I
= V
= 10V, I
= 40V, V
= 40V, V
= 16V
= -16V
= 32V
= 5.0V
= 20V
= 5.0V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
Conditions
Conditions
e
e
D
DS
S
F
D
D
DS
DS
= 250µA
D
D
GS
GS
= 250µA
= 75A, V
= 75A, V
= 75A
= 75A
= 40A
= 40A
= 0V to 32V
= 1.0V, ƒ = 1.0MHz
= 32V, ƒ = 1.0MHz
= 0V
= 0V, T
e
www.irf.com
e
D
e
e
G
= 1mA
DD
GS
J
= 125°C
= 20V
G
= 0V
f
D
S
e
S
D

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