STP9NK50Z STMicroelectronics, STP9NK50Z Datasheet

MOSFET N-CH 500V 7.2A TO-220

STP9NK50Z

Manufacturer Part Number
STP9NK50Z
Description
MOSFET N-CH 500V 7.2A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STP9NK50Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 3.6A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
7.2A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
32nC @ 10V
Input Capacitance (ciss) @ Vds
910pF @ 25V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.85 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
7.2 A
Power Dissipation
110 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3203-5
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS
ORDERING INFORMATION
June 2004
STP9NK50Z
STP9NK50ZFP
STB9NK50Z
STB9NK50Z-1
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
LIGHTING
STP9NK50ZFP
STB9NK50ZT4
STB9NK50Z-1
TYPE
SALES TYPE
STP9NK50Z
N-CHANNEL 500V - 0.72
DS
(on) = 0.72
500 V
500 V
500 V
500 V
V
DSS
< 0.85
< 0.85
< 0.85
< 0.85
R
DS(on)
P9NK50ZFP
MARKING
P9NK50Z
B9NK50Z
B9NK50Z
Zener-Protected SuperMESH™ MOSFET
7.2 A
7.2 A
7.2 A
7.2 A
I
D
STP9NK50Z - STP9NK50ZFP
110 W
110 W
110 W
STB9NK50Z - STB9NK50Z-1
30 W
Pw
- 7.2A TO-220/FP/D
PACKAGE
TO-220FP
TO-220
D
I
2
2
PAK
PAK
INTERNAL SCHEMATIC DIAGRAM
TO-220
D
2
PAK
1
3
TAPE & REEL
PACKAGING
2
TUBE
TUBE
TUBE
PAK/I
TO-220FP
I
2
PAK
2
1 2
PAK
1
2
3
3
1/13

Related parts for STP9NK50Z

STP9NK50Z Summary of contents

Page 1

... MDmesh™ products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC LIGHTING ORDERING INFORMATION SALES TYPE STP9NK50Z STP9NK50ZFP STB9NK50ZT4 STB9NK50Z-1 June 2004 STP9NK50Z - STP9NK50ZFP STB9NK50Z - STB9NK50Z-1 - 7.2A TO-220/FP/D Zener-Protected SuperMESH™ MOSFET 7.2 A 110 W 7 7.2 A 110 W 7 ...

Page 2

... STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 ABSOLUTE MAXIMUM RATINGS Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous Drain Current (pulsed Total Dissipation at T TOT Derating Factor V Gate source ESD(HBM-C=100pF, R=1.5K ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope ...

Page 3

... I Reverse Recovery Current RRM Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1 Pulse width limited by safe operating area defined as a constant equivalent capacitance giving the same charging time as C oss eq DSS STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 Test Conditions mA Max Rating Max Rating, T ...

Page 4

... STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 Safe Operating Area For TO-220/D2PAK/I2PAK Safe Operating Area For TO-220FP Output Characteristics 4/13 Thermal Impedance For TO-220/D2PAK/I2PAK Thermal Impedance For TO-220FP Transfer Characteristics ...

Page 5

... Transconductance Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temp. STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 Static Drain-source On Resistance Capacitance Variations Normalized On Resistance vs Temperature 5/13 ...

Page 6

... STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 Source-drain Diode Forward Characteristics Maximum Avalanche Energy vs Temperature 6/13 Normalized BVDSS vs Temperature ...

Page 7

... Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit 7/13 ...

Page 8

... STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 DIM. MIN. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 8/13 TO-220 MECHANICAL DATA mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 16.4 14 ...

Page 9

... STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 TO-220FP MECHANICAL DATA mm. DIM. MIN. TYP A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9.8 L5 2 Ø 3 MAX. MIN. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.017 1 0.030 1.5 0.045 1.5 0.045 5.2 0.195 2 ...

Page 10

... STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 DIM. MIN. A 4.4 A1 2.49 A2 0.03 B 0.7 B2 1.14 C 0.45 C2 1. 1.27 L3 1 0º 10/ PAK MECHANICAL DATA mm. TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 8 10.4 8.5 5.28 15.85 1.4 1.75 3.2 0.4 8º inch MIN ...

Page 11

... STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 TO-262 (I mm. DIM. MIN. TYP A 4.40 A1 2.40 b 0.61 b1 1.14 c 0.49 c2 1.23 D 8.95 e 2. 3.50 L2 1.27 2 PAK) MECHANICAL DATA MAX. MIN. 4.60 0.173 2.72 0.094 0.88 0.024 1.70 0.044 0.70 0.019 1.32 0.048 9.35 0.352 2.70 0.094 5 ...

Page 12

... STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z PAK FOOTPRINT TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11 ...

Page 13

... STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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